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Name: TPH1R403NL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH1R403NL,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Toshiba Semiconductor and Storage TPH1R403NL,L1Q

Part No.:: TPH1R403NL,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Package:: 8-SOP Advance (5x5)

Datasheet:: TPH1R403NL,L1Q.pdf

Description:: MOSFET N-CH 30V 60A 8SOP

In Stock:: 3072

Quantity:: Add To Cart

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TPH1R403NL,L1Q Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
U-MOSVIII-H
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
60A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
1.4mOhm @ 30A, 10V
Vgs(th)(Max)@Id:
2.3V @ 500µA
GateCharge(Qg)(Max)@Vgs:
46 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
4400 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
1.6W (Ta), 64W (Tc)
OperatingTemperature:
150°C (TJ)
MountingType:
Surface Mount

TPH1R403NL,L1Q this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including TPH1R403NL,L1Q price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for TPH1R403NL,L1Q to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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TPH1R403NL,L1Q information

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TPH1R403NL,L1Q Typical application Circuitry

TPH1R403NL,L1Q

The TPH1R403NL,L1Q is a high-performance N-channel MOSFET transistor produced by Toshiba. This MOSFET is designed for use in applications requiring high efficiency and fast switching.

Key features of TPH1R403NL,L1Q:

- It supports a maximum drain-source voltage of 30V and can handle a continuous drain current of up to 150A.

- The maximum gate-source voltage is ±20V.

- It has a low drain-source on-resistance of 1.4 mOhm at 10V, ensuring efficient operation.

- The MOSFET features a typical gate charge of 46 nC at 10V, which contributes to its high-speed switching capability.

- It is designed for surface mount and comes in an 8-pin SOP Advance package.

One potential application of the TPH1R403NL,L1Q is in high-efficiency DC-DC converters. In such a circuit, this MOSFET can be used as the main switch.

The TPH1R403NL,L1Q specific circuit connection would include:

- Gate Control: The gate of the MOSFET (pin configuration specific to the SOP Advance package) is connected to the PWM output of a controller, which regulates the MOSFET's switching.

- Source and Drain Connections: The source is typically connected to the ground, and the drain is connected to one side of the load.

- Flyback Diode: A flyback diode is often used across the inductive load to protect the MOSFET from voltage spikes.

- Gate Resistor: A resistor may be added between the gate and the controller to limit the inrush current.

When designing circuits with the TPH1R403NL,L1Q, it's important to consider factors such as the thermal management due to the potential heat generated at high currents, the gate drive voltage to ensure efficient switching without damaging the transistor, and the overall power dissipation capabilities of the MOSFET.

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6. What is the process for return or replacement of TPH1R403NL,L1Q?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TPH1R403NL,L1Q.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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