What is the Additional Feature ?

Name: BSH103,215
Brand: Nexperia USA Inc.
SKU: BSH103,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Nexperia USA Inc. BSH103,215

Part No.:: BSH103,215

Manufacturer:: Nexperia USA Inc.

Package:: TO-236AB

Datasheet:: BSH103,215.pdf

Description:: MOSFET N-CH 30V 850MA TO236AB

In Stock:: 254444

Quantity:: Add To Cart

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BSH103,215 Typical application Circuitry

BSH103,215

The BSH103,215 is a type of electronic component, specifically an N-channel enhancement mode Field-Effect Transistor (MOSFET). It's a versatile device used in various electronic circuits for its efficient control and signal amplification capabilities.

Chip Functionality

- Efficient N-Channel MOSFET: The BSH103,215 operates as an N-channel enhancement mode MOSFET, ideal for applications requiring fast switching and effective signal modulation.

Application Environments

- Power Management in Portable Devices: This MOSFET is commonly used in power management circuits of portable electronic devices.

- Signal Switching in Communication Devices: It also finds applications in signal switching circuits within communication devices.

Key Parameters

- Low Threshold Voltage: The BSH103,215 is characterized by a low threshold voltage, which facilitates its operation at lower voltages.

- High-Speed Switching Capability: Designed for high-speed switching, making it suitable for rapid signal processing.

Circuit Design: Power Management in a Portable Device

Specific Application: We'll explore a circuit for power management in a portable electronic device using the BSH103,215.

Detailed Circuit Configuration

1. Battery Connection: Attach the battery of the portable device to the circuit.

2. MOSFET Integration: Connect the drain (Pin 1) of the BSH103,215 to the device's power input.

3. Grounding the Source: Link the source pin (Pin 2) of the MOSFET to the circuit ground.

4. Gate Voltage Control: Apply a voltage to the gate pin (Pin 3) for regulating power delivery to the device.

5. Load Connection: Connect the load (the portable device) to the MOSFET's drain.

6. Protective Diode Installation: Include a diode across the load for protection against reverse voltage.

Design Considerations

When designing with the BSH103,215, these factors are essential:

1. Effective Heat Management: Implementing heat dissipation techniques is vital due to the heat generated during switching.

2. Precise Gate Voltage Regulation: Accurate control of the gate voltage is crucial for optimal MOSFET performance.

3. Load Compatibility Assessment: Ensure the MOSFET's specifications align with the portable device's power requirements.

4. Voltage Fluctuation Protection: Incorporate voltage regulation to protect against power fluctuations.

5. Optimization of Switching Frequency: Choose a suitable switching frequency to enhance efficiency and device performance.

6. Parasitic Capacitance Minimization: Design to minimize parasitic capacitance, which can impact efficiency.

7. Signal Integrity Consideration: Maintain signal integrity, particularly in portable communication devices.

8. Environmental Condition Adaptation: Factor in environmental conditions like temperature variations and potential moisture exposure.

In summary, the BSH103,215 MOSFET is a crucial component in modern electronics, particularly suited for power management in portable devices and signal switching in communication devices. Its design emphasizes low-threshold voltage operation and high-speed switching. When integrating this MOSFET into a circuit, considerations such as thermal management, voltage regulation, and environmental adaptability are key to achieving optimal performance and ensuring device longevity.

BSH103,215 information

BSH103,215 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Not For New Designs
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
850mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.5V
RdsOn(Max)@IdVgs:
400mOhm @ 500mA, 4.5V
Vgs(th)(Max)@Id:
400mV @ 1mA (Min)
GateCharge(Qg)(Max)@Vgs:
2.1 nC @ 4.5 V
Vgs(Max):
±8V
InputCapacitance(Ciss)(Max)@Vds:
83 pF @ 24 V
FETFeature:
-
PowerDissipation(Max):
540mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSH103,215 FAQ

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3. Are the BSH103,215 price and inventory displayed accurate?

The price and inventory of BSH103,215 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of BSH103,215?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSH103,215 we delivered, we will accept the replacement or return of the BSH103,215 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSH103,215.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations