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Name: SSM3J332R,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM3J332R,LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Toshiba Semiconductor and Storage SSM3J332R,LF

Part No.:: SSM3J332R,LF

Manufacturer:: Toshiba Semiconductor and Storage

Package:: SOT-23F

Datasheet:: SSM3J332R,LF.pdf

Description:: MOSFET P-CH 30V 6A SOT23F

In Stock:: 100039

Quantity:: Add To Cart

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SSM3J332R,LF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SSM3J332R,LF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SSM3J332R,LF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SSM3J332R,LF Typical application Circuitry

The SSM3J332R,LF is a MOSFET transistor from the SSM series, manufactured by Toshiba. This series is recognized for its compact, high-performance MOSFET transistors, designed for use in various electronic applications, particularly where space is at a premium and efficient power management is required. The SSM3J332R,LF, in particular, is a P-channel MOSFET, often used for switching and amplification purposes in circuits like power management systems, load switches, and other applications requiring a small footprint and efficient power handling.

1. Power Supply Connection and Voltage Characteristics: Being a P-channel MOSFET, the SSM3J332R,LF typically operates with the source pin connected to a higher voltage relative to the drain when turned on. It requires a negative gate-source voltage (Vgs) to turn on, unlike N-channel MOSFETs. The voltage rating for Vds (Drain-Source Voltage) and Vgs should be carefully noted from the datasheet to ensure proper operation and to prevent damage.

2. Pin Configuration and Circuit Integration: The Gate (G), Drain (D), and Source (S) pins are the three that make up the SSM3J332R,LF. In a typical configuration, the Source is connected to the positive voltage supply, the Drain to the load, and the Gate to the control signal, which turns the MOSFET on or off. The gate voltage determines the conduction between the Drain and Source.

3. Incorporation into Electronic Systems: The SSM3J332R,LF is often used in low-power and space-constrained applications. It is suitable for use in load switching applications, power management modules, and as a part of more complex circuits in consumer electronics, where efficient control of current flow is needed.

4. Operational Characteristics and Efficiency: The SSM3J332R,LF is designed for low on-resistance and fast switching speeds, making it efficient for controlling power in electronic circuits. Its P-channel configuration allows for simpler drive circuitry in certain applications, especially where the load needs to be connected to ground.

5. Circuit Design and PCB Layout Considerations: When designing a PCB that includes the SSM3J332R,LF, it is crucial to consider the current carrying capability and heat dissipation. It is imperative that the architecture guarantees that the traces linked to the MOSFET can sustain the current without experiencing excessive voltage drop or overheating.

6. Compliance with Semiconductor Standards: The SSM3J332R,LF adheres to industry standards for semiconductor components, ensuring its reliability and performance in various applications.

7. Handling and Installation Precautions: As with most semiconductor devices, the SSM3J332R,LF is sensitive to electrostatic discharge (ESD). Handling the component requires ESD precautions, and careful soldering practices are essential to prevent damage during installation.

In summary, the SSM3J332R,LF from the SSM series is a compact and efficient P-channel MOSFET, ideal for applications requiring efficient power management in a small package. Its implementation involves proper power supply connections, accurate pin configuration, integration into electronic systems, leveraging its low on-resistance and fast switching capabilities, thoughtful PCB design, compliance with semiconductor standards, and careful handling during installation. These practices ensure that the SSM3J332R,LF functions effectively in its intended applications.

SSM3J332R,LF information

SSM3J332R,LF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
U-MOSVI
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
1.8V, 10V
RdsOn(Max)@IdVgs:
42mOhm @ 5A, 10V
Vgs(th)(Max)@Id:
1.2V @ 1mA
GateCharge(Qg)(Max)@Vgs:
8.2 nC @ 4.5 V
Vgs(Max):
±12V
InputCapacitance(Ciss)(Max)@Vds:
560 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
1W (Ta)
OperatingTemperature:
150°C (TJ)
MountingType:
Surface Mount

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6. What is the process for return or replacement of SSM3J332R,LF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SSM3J332R,LF we delivered, we will accept the replacement or return of the SSM3J332R,LF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SSM3J332R,LF.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations