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Name: CSD13381F4
Brand: Texas Instruments
SKU: CSD13381F4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD13381F4

Part No.:: CSD13381F4

Manufacturer:: Texas Instruments

Package:: 3-PICOSTAR

Datasheet:: CSD13381F4.pdf

Description:: MOSFET N-CH 12V 2.1A 3PICOSTAR

In Stock:: 534409

Quantity:: Add To Cart

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CSD13381F4 Typical application Circuitry

CSD13381F4

The CSD13381F4 is a small footprint, N-channel MOSFET designed by Texas Instruments, known for its low on-resistance and high efficiency, making it ideal for portable and battery-powered applications where space and power efficiency are critical. This component excels in high-speed switching applications, such as load switches, power management circuits, and battery protection schemes.

Application Scenarios:

One common application for the CSD13381F4 is in battery management systems, specifically in portable electronics like smartphones, tablets, and wearables, where it can be used to switch power efficiently between different system components or manage charging circuits.

Characteristic Parameters:

- Low On-Resistance (R_DS(on)): This minimizes power losses during operation, which is crucial for maximizing battery life in portable devices.

- Compact Footprint: Its small size allows for more dense PCB layouts, which is essential in miniaturized electronic devices.

- High-Speed Switching: Enables efficient power conversion, which is beneficial for reducing energy consumption and improving performance in power management circuits.

Circuit Connection for a Battery Protection Circuit:

1. Battery Connection: The drain of the CSD13381F4 should be connected directly to the positive terminal of the battery. For the purpose of managing the current flowing to and from the battery, this position is essential.

2. Load Connection: The source pin of the CSD13381F4 is connected to the system load or to the charging circuit. This configuration allows the MOSFET to control the discharging and charging paths of the battery.

3. Control Logic Connection: The gate of the CSD13381F4 must be connected to a microcontroller or a dedicated battery management IC that can provide the appropriate control signals to turn the MOSFET on or off based on the battery's state (such as overcharge, overdischarge, and short circuit conditions).

4. Protection Circuit Integration: Include over-voltage, under-voltage, and over-current protection circuits in the design. These circuits can interact with the CSD13381F4 through the control logic to ensure safe operation under all conditions.

Design Points to Remember:

- Gate Drive Considerations: To fully switch on the MOSFET without going above its maximum gate-source voltage rating, make sure the gate drive voltage is within the given range on the CSD13381F4.

- Thermal Management: Even though the CSD13381F4 is designed for low power loss, in applications with high current flow, additional heat sinking or thermal management techniques may be required.

- PCB Layout: Careful layout is critical to minimize parasitic inductances and resistances, which can affect the switching performance and efficiency of the CSD13381F4.

- Protection Features: It's essential to design the circuit with appropriate protection features to prevent damage to the CSD13381F4 and the battery from abnormal operating conditions, such as short circuits or excessive temperature.

Incorporating the CSD13381F4 into a battery protection circuit showcases its efficiency in managing power in portable devices, ensuring safe operation and optimal battery life. By addressing design considerations such as gate drive requirements, thermal management, PCB layout, and integrated protection features, designers can leverage the full capabilities of the CSD13381F4 for advanced portable electronic applications.

CSD13381F4 information

CSD13381F4 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
NexFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
12 V
Current-ContinuousDrain(Id)@25°C:
2.1A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
1.8V, 4.5V
RdsOn(Max)@IdVgs:
180mOhm @ 500mA, 4.5V
Vgs(th)(Max)@Id:
1.1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
1.4 nC @ 4.5 V
Vgs(Max):
8V
InputCapacitance(Ciss)(Max)@Vds:
200 pF @ 6 V
FETFeature:
-
PowerDissipation(Max):
500mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of CSD13381F4.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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