What is the Additional Feature ?

Name: BSS84AK,215
Brand: Nexperia USA Inc.
SKU: BSS84AK,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Nexperia USA Inc. BSS84AK,215

Part No.:: BSS84AK,215

Manufacturer:: Nexperia USA Inc.

Package:: TO-236AB

Datasheet:: BSS84AK,215.pdf

Description:: MOSFET P-CH 50V 180MA TO236AB

In Stock:: 3314

Quantity:: Add To Cart

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BSS84AK,215 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS84AK,215 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS84AK,215 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS84AK,215 Typical application Circuitry

The BSS84AK,215 is a significant model within the P-channel MOSFET family, renowned for its effectiveness in low-power switching applications. This device is particularly designed to offer efficient performance in circuits where space conservation and power efficiency are essential, such as in portable devices, power management systems, and precision control applications.

1. Series Specification: The BSS84AK,215 falls under the P-channel MOSFET category, distinguished by its ability to facilitate current flow with a negative gate-source voltage. This characteristic makes it exceptionally suitable for high-side switching configurations, allowing for seamless control over the power delivery to various loads.

2. Pin Configuration (Source, Gate, Drain): Encapsulated typically in a SOT-23 package, the BSS84AK,215 includes three primary terminals. The Source (S) terminal, conventionally connected to the positive power supply in P-channel MOSFET applications. The Gate (G) terminal, where a negative voltage is applied to control the semiconductor's conductive state. The Drain (D) terminal, designated for connection to the circuit's load.

3. Circuit Integration Approach: The Drain terminal of the BSS84AK,215 must be connected to the load, and the Source terminal must be connected to the positive voltage supply, in order to incorporate it into a circuit. This arrangement enables the MOSFET to manage the power flow to the load efficiently by modulating the voltage applied to the Gate.

4. Gate Drive Methodology: Activating the BSS84AK,215 requires applying a negative voltage to the Gate relative to the Source. This gate drive voltage must surpass the device's threshold voltage to ensure it transitions to the conducting state, emphasizing the importance of a gate drive circuit designed to provide the appropriate voltage level for consistent operation.

5. Protective Component Inclusion: While the BSS84AK,215 is built for robust performance, integrating additional protective components, such as gate-to-source resistors to mitigate the gate current or Zener diodes to clamp excessive voltages, can enhance the circuit's durability and reliability.

6. Thermal Management Practices: Given the BSS84AK,215's compact nature and power dissipation capabilities, particularly when operating at elevated currents, effective thermal management is crucial. This may involve employing PCB layout strategies that facilitate heat dissipation or using external cooling mechanisms to ensure the MOSFET operates within its safe temperature range.

Employing the BSS84AK,215 in electronic designs offers a compact, efficient solution for power control, particularly beneficial in applications where minimizing power loss and conserving space are critical. Its suitability for high-side switching, combined with low on-state resistance and fast switching capabilities, renders it an essential component in the development of modern, energy-conscious electronic systems.

BSS84AK,215 information

BSS84AK,215 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101, TrenchMOS™
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
50 V
Current-ContinuousDrain(Id)@25°C:
180mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
7.5Ohm @ 100mA, 10V
Vgs(th)(Max)@Id:
2.1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.35 nC @ 5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
36 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
350mW (Ta), 1.14W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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6. What is the process for return or replacement of BSS84AK,215?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS84AK,215 we delivered, we will accept the replacement or return of the BSS84AK,215 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS84AK,215.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations