What is the Additional Feature ?

Name: IRLML6302TRPBF
Brand: Infineon Technologies
SKU: IRLML6302TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRLML6302TRPBF

Part No.:: IRLML6302TRPBF

Manufacturer:: Infineon Technologies

Package:: Micro3™/SOT-23

Datasheet:: IRLML6302TRPBF.pdf

Description:: MOSFET P-CH 20V 780MA SOT23

In Stock:: 308726

Quantity:: Add To Cart

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IRLML6302TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRLML6302TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRLML6302TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRLML6302TRPBF Typical application Circuitry

IRLML6302TRPBF

The IRLML6302TRPBF is a pivotal component in International Rectifier's HEXFET family, delineated by its P-channel MOSFET architecture, designed to operate with efficiency in compact spaces. This MOSFET is equipped with innovative technology, ensuring minimal on-resistance while providing maximum switching speed. Recognized for its reliability and performance in various applications, understanding the IRLML6302TRPBF's intrinsic pin functionality and implementing it in circuits is crucial.

1. Drain (D): Serving as the terminal where current leaves the MOSFET, the Drain should be connected to the lower voltage side in most applications when the MOSFET is being used as a switch. Being a P-channel MOSFET, it usually sees usage in high-side switching.

2. Gate (G):

- The nerve center of the IRLML6302TRPBF, this terminal determines whether the MOSFET is on or off. The MOSFET is activated by applying a voltage that is greater than the threshold voltage in relation to the Source pin. Conversely, making the Gate voltage equivalent to the Source will switch the MOSFET off.

- It is beneficial to integrate a pull-up resistor at the Gate to ensure that the IRLML6302TRPBF remains off by default during scenarios like power-up or when no control signal is present.

3. Source (S): This terminal, often connected to the positive voltage rail, is where current enters the MOSFET. For a P-channel MOSFET such as the IRLML6302TRPBF, the Source is usually at a higher potential than the Drain during normal operation.

4. Refinements for Optimal Operation:

- Gate Drive Configuration: Given the IRLML6302TRPBF's P-channel nature, a Gate driver or level shifter might be necessary, especially when the control signals stem from low-voltage microcontrollers. This guarantees that the gate voltage is appropriate for effectively turning on and off the MOSFET.

- Protection Schemes: Introducing a zener diode between the Gate and Source can protect the IRLML6302TRPBF from potential voltage spikes or transients. This setup ensures the voltage remains within the permissible limits.

- Thermal Considerations: Although the IRLML6302TRPBF is designed for efficiency, under high current operations, it might still produce heat. Proper heat dissipation strategies, like using thermal pads or keeping traces wide, can prolong the MOSFET's lifespan and ensure stable operation.

In the world of electronic design, the IRLML6302TRPBF proves itself as a versatile P-channel MOSFET, ideal for various applications ranging from power management to motor control. To harness its full potential, a comprehensive grasp of its characteristics, paired with precise circuit integration, is essential. As always, when incorporating the IRLML6302TRPBF into designs, consulting its datasheet and ensuring all connections and operational parameters align with the manufacturer's recommendations is paramount.

IRLML6302TRPBF information

IRLML6302TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
20 V
Current-ContinuousDrain(Id)@25°C:
780mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.7V, 4.5V
RdsOn(Max)@IdVgs:
600mOhm @ 610mA, 4.5V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
3.6 nC @ 4.45 V
Vgs(Max):
±12V
InputCapacitance(Ciss)(Max)@Vds:
97 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
540mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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6. What is the process for return or replacement of IRLML6302TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRLML6302TRPBF we delivered, we will accept the replacement or return of the IRLML6302TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRLML6302TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations