What is the Additional Feature ?

Name: NTK3139PT1G
Brand: ON Semiconductor
SKU: NTK3139PT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTK3139PT1G

Part No.:: NTK3139PT1G

Manufacturer:: ON Semiconductor

Package:: SOT-723

Datasheet:: NTK3139PT1G.pdf

Description:: MOSFET P-CH 20V 660MA SOT723

In Stock:: 14607

Quantity:: Add To Cart

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NTK3139PT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTK3139PT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTK3139PT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTK3139PT1G Typical application Circuitry

NTK3139PT1G

The NTK3139PT1G is a P-Channel MOSFET designed primarily for power management and load-switching applications.

NTK3139PT1G Application Scenarios: It finds utility in portable devices, power management circuits, and as a switch in various consumer electronics.

Key Specifications: This MOSFET is known for its low on-resistance, small form factor, and low threshold voltage.

Circuit Integration:

1. Source Attachment: The source pin (Pin 3) needs to be connected to the positive voltage rail.

2. Gate Control: Applying a voltage lower than the source voltage to the gate pin (Pin 1) enables the MOSFET.

3. Drain Connection: The drain pin (Pin 2) is where the load to be controlled is connected.

4. Gate Protection: A resistor may be placed between the gate and control voltage source to protect the MOSFET.

Design Considerations NTK3139PT1G:

1. ESD Protection: Given the sensitivity of the gate, electrostatic discharge protection is vital.

2. Biasing Voltage: Ensuring the gate-source voltage doesn't exceed specified thresholds is crucial to prevent damage.

3. Load Characteristics: The characteristics of the load, including inrush current, need to be understood to select a suitable MOSFET.

Incorporating the NTK3139PT1G into a circuit demands careful attention to electrostatic discharge protection, gate biasing, and an understanding of the load characteristics for optimal performance.

NTK3139PT1G information

NTK3139PT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
20 V
Current-ContinuousDrain(Id)@25°C:
660mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
1.5V, 4.5V
RdsOn(Max)@IdVgs:
480mOhm @ 780mA, 4.5V
Vgs(th)(Max)@Id:
1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±6V
InputCapacitance(Ciss)(Max)@Vds:
170 pF @ 16 V
FETFeature:
-
PowerDissipation(Max):
310mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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6. What is the process for return or replacement of NTK3139PT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NTK3139PT1G we delivered, we will accept the replacement or return of the NTK3139PT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NTK3139PT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations