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Name: SI2301CDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2301CDS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI2301CDS-T1-GE3

Part No.:: SI2301CDS-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: SOT-23-3 (TO-236)

Datasheet:: SI2301CDS-T1-GE3.pdf

Description:: MOSFET P-CH 20V 3.1A SOT23-3

In Stock:: 202473

Quantity:: Add To Cart

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SI2301CDS-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2301CDS-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2301CDS-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI2301CDS-T1-GE3 Typical application Circuitry

SI2301CDS-T1-GE3

The SI2301CDS-T1-GE3 is a P-channel MOSFET, widely used in electronic circuits for its ability to efficiently control the flow of electrical power. It's often found in applications such as power management, load switching, and as part of the charging circuits in portable devices. The key parameters and characteristics of this MOSFET include its low on-resistance, high-speed switching capabilities, and small footprint, making it ideal for compact and power-efficient designs.

Application Scenario: Power Management in a Portable Device

Overview: The SI2301CDS-T1-GE3 can be utilized in the power management circuitry of a portable electronic device, such as a smartphone.

Circuit Connection:

1. Gate Control: Connect the gate (pin 1) to a microcontroller (MCU) output pin. This allows the MCU to control the MOSFET, turning it on or off as needed for power management.

2. Source Connection: Attach pin 3, or the source, to the ground wire of the circuit. This is the reference point for the MOSFET operation.

3. Drain Load: Connect the positive supply voltage to one side of the load and pin 2, or the drain, to the other. In this setup, when the MOSFET is on, current flows through the load.

4. Pull-down Resistor: Put a resistor in place between the source and the gate. This guarantees that in the absence of a control voltage, the MOSFET stays off.

5. Programming Interface: For programming the MCU, connect the necessary programming pins (often including VCC, GND, RX, TX, RESET, and a programming clock line) to a programming header.

Design Considerations:

- Voltage Threshold: Ensure the MCU output voltage matches the gate threshold voltage of the SI2301CDS-T1-GE3 to ensure efficient switching.

- Heat Dissipation: Given the power handling, proper heat sinking or thermal management techniques might be necessary.

- Switching Speed: Consider the switching speed in relation to the overall power efficiency and potential electromagnetic interference (EMI) in the design.

- Protection: Implement protection mechanisms like current limiting or thermal shutdown to safeguard the MOSFET against overcurrent and overheating scenarios.

By integrating the SI2301CDS-T1-GE3 in this manner, efficient power management can be achieved in portable electronic devices, leveraging its low on-resistance and high-speed switching capabilities.

SI2301CDS-T1-GE3 information

SI2301CDS-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
20 V
Current-ContinuousDrain(Id)@25°C:
3.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
2.5V, 4.5V
RdsOn(Max)@IdVgs:
112mOhm @ 2.8A, 4.5V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
10 nC @ 4.5 V
Vgs(Max):
±8V
InputCapacitance(Ciss)(Max)@Vds:
405 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
860mW (Ta), 1.6W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI2301CDS-T1-GE3 FAQ

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3. Are the SI2301CDS-T1-GE3 price and inventory displayed accurate?

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6. What is the process for return or replacement of SI2301CDS-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI2301CDS-T1-GE3 we delivered, we will accept the replacement or return of the SI2301CDS-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI2301CDS-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations