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Name: 2N7002P,215
Brand: Nexperia USA Inc.
SKU: 2N7002P,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Nexperia USA Inc. 2N7002P,215

Part No.:: 2N7002P,215

Manufacturer:: Nexperia USA Inc.

Package:: TO-236AB

Datasheet:: 2N7002P,215.pdf

Description:: MOSFET N-CH 60V 360MA TO236AB

In Stock:: 351661

Quantity:: Add To Cart

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2N7002P,215 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2N7002P,215 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2N7002P,215 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2N7002P,215 Typical application Circuitry

2N7002P,215

The 2N7002P,215 is an integral part of the electronics world, serving as a N-channel enhancement-mode Field Effect Transistor (MOSFET). This MOSFET is packaged in a compact SOT-23 (TO-236AB) format, making it suitable for surface mounting in various electronic devices.

Usage Scenarios:

1. In switching applications, such as relay replacements or DC-DC converters.

2. For power management in battery-operated devices or portable gadgets.

3. As a component in motor control circuits.

4. As a logic level translator.

Parameter Highlights:

1. Drain-Source Voltage (Vds): A maximum of around 60V.

2. Drain Current (Id): Can support currents up to 300 mA.

3. Threshold Voltage (Vgs(th)): Typically near 2.1V.

4. On-resistance (Rds(on)): This is a low value, which implies minimal conduction losses.

5. Switching Capabilities: This MOSFET can switch at high speeds, making it suitable for fast-paced applications.

Sample Circuit: Logic Level Translation

2N7002P,215 can be employed to interface between two systems operating at different voltage levels.

1. MOSFET Configuration:

Drain (D) of 2N7002P,215 connects to the higher voltage system (let's say 5V system).

2. Ground Reference:

The Source (S) of the 2N7002P,215 is tied to the ground of the lower voltage system (e.g., 3.3V system).

3. Gate Drive:

The gate (G) of the 2N7002P,215 interfaces with the output of the lower voltage system (3.3V). A pull-up resistor (for instance, 10kΩ) is linked between the gate and the higher voltage system (5V) to pull the gate up when not driven.

4. Output:

The Drain (D) also becomes the translated output, which can be connected to inputs of the higher voltage system.

Design Tips:

1. Gate Protection: The gate of 2N7002P,215 is susceptible to static charges. It's prudent to use a zener diode or similar protection scheme to protect against overvoltage.

2. Thermal Management: Even with a low Rds(on), the 2N7002P,215 can generate heat under certain conditions. Proper ventilation or a heat sink might be essential, depending on the application.

3. Gate Drive: The MOSFET's gate capacitance can affect the speed of operation. Depending on the application, it may be beneficial to use a dedicated gate driver.

4. Source-Drain Diode: Internally, the 2N7002P,215 has an inherent diode between its source and drain. When working with inductive loads, external protection (like a flyback diode) might be required.

To wrap up, the 2N7002P,215 is a versatile MOSFET that finds utility in an array of electronic applications. When designing circuits with it, a focus on protection, interfacing, and thermal management will ensure optimal performance.

2N7002P,215 information

2N7002P,215 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
360mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
1.6Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
2.4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.8 nC @ 4.5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
50 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
350mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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6. What is the process for return or replacement of 2N7002P,215?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2N7002P,215.

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