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Name: STL8N10LF3
Brand: STMicroelectronics
SKU: STL8N10LF3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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STMicroelectronics STL8N10LF3

Part No.:: STL8N10LF3

Manufacturer:: STMicroelectronics

Package:: PowerFlat™ (5x6)

Datasheet:: STL8N10LF3.pdf

Description:: MOSFET N CH 100V 20A PWRFLT5X6

In Stock:: 3773

Quantity:: Add To Cart

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STL8N10LF3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101, STripFET™ III
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
5V, 10V
RdsOn(Max)@IdVgs:
35mOhm @ 4A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
20.5 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
970 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
4.3W (Ta), 70W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

STL8N10LF3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including STL8N10LF3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for STL8N10LF3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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STL8N10LF3 information

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STL8N10LF3 Typical application Circuitry

The STL8N10LF3 is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed and produced by STMicroelectronics. MOSFETs like the STL8N10LF3 are designed to handle significant power levels, and they are used extensively in power electronics applications.

Key Features of the STL8N10LF3:

- Voltage and Current Ratings: The STL8N10LF3 boasts a maximum drain-source voltage (Vdss) of 100V, and it supports a continuous drain current (Id) of up to 7.5A. These specifications are representative of the device's ability to operate in high power conditions.

- Package: This Power MOSFET comes in a DPAK package, which is well-known for its decent heat dissipation capacity, making it a viable option for power transistor applications.

- RDS(on): The STL8N10LF3 has a relatively low on-resistance (RDS(on)) of approximately 0.28 Ohms, allowing for lower conduction losses and increased efficiency when the device is on.

- Fast Switching: With a high speed of switching, this device is particularly useful in power supply and motor control applications.

Applications of the STL8N10LF3 include power supplies, motor control systems, and other power management applications, like DC-DC converters.

As an application example, consider its usage in a DC motor control system:

1. Drain Connection: Pin 2 of the STL8N10LF3 is the Drain pin. This is typically connected to the motor terminal. Current flows out of the Drain when the MOSFET is on.

2. Source Connection: Typically, the system ground is connected to the source pin (Pin 3). This is the point from which current flows into the MOSFET.

3. Gate Control: The MOSFET can be turned on and off using the Gate pin (Pin 1). In a DC motor control system, the Gate would connect to a PWM (Pulse Width Modulation) controller. This controller sends pulses to the Gate, turning the MOSFET on and off rapidly to control the power to the motor and thus its speed.

When designing circuits with the STL8N10LF3, a few key considerations should be noted:

- Heat Dissipation: Given that Power MOSFETs can produce considerable heat during operation, proper heat dissipation methods should be employed. This can entail using heat sinks or other cooling methods.

- Gate Driving: It is critical to drive the Gate correctly to ensure efficient switching of the MOSFET. In particular, the Gate must be protected from potential overvoltage conditions that could lead to damage.

- Voltage Ratings: It is essential not to exceed the maximum drain-source voltage or gate-source voltage of the STL8N10LF3 to prevent damage to the device.

- Protection Measures: Depending on the application, additional protection measures, like overcurrent or overvoltage protection circuits, might be required to protect the MOSFET from electrical faults.

In conclusion, the STL8N10LF3 is a high-performing Power MOSFET, offering versatility for various high-power applications.

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6. What is the process for return or replacement of STL8N10LF3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STL8N10LF3 we delivered, we will accept the replacement or return of the STL8N10LF3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STL8N10LF3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations