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Name: STH2N120K5-2AG
Brand: STMicroelectronics
SKU: STH2N120K5-2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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STMicroelectronics STH2N120K5-2AG

Part No.:: STH2N120K5-2AG

Manufacturer:: STMicroelectronics

Package:: H2Pak-2

Datasheet:: STH2N120K5-2AG.pdf

Description:: MOSFET N-CH 1200V 1.5A H2PAK-2

In Stock:: 2432

Quantity:: Add To Cart

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STH2N120K5-2AG Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
1200 V
Current-ContinuousDrain(Id)@25°C:
1.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
10Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
4V @ 100µA
GateCharge(Qg)(Max)@Vgs:
5.3 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
124 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
60W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

STH2N120K5-2AG this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including STH2N120K5-2AG price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for STH2N120K5-2AG to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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STH2N120K5-2AG information

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STH2N120K5-2AG Typical application Circuitry

STH2N120K5-2AG

STMicroelectronics created the power MOSFET known as the STH2N120K5-2AG. MOSFETs, or Metal Oxide Semiconductor Field-Effect Transistors, are frequently used in electronics because of their exceptional performance at high frequencies and capacity to handle large amounts of power.

Key Features of the STH2N120K5-2AG: The STH2N120K5-2AG is characterized by several important features. It boasts a high drain-to-source voltage of 1200V, which enables it to operate safely in high voltage environments. Additionally, it features low on-resistance, meaning it experiences minimal power loss during operation. Other essential parameters include a gate charge of 38nC and a continuous drain current of 2A.

Application Scenarios: This STH2N120K5-2AG MOSFET is primarily used in high voltage applications, including motor control, power supplies, and other power electronic systems. It's particularly valuable in environments where a high breakdown voltage is required, thanks to its 1200V drain-to-source voltage rating.

Circuit Connection in a Switched-Mode Power Supply

Let's consider a typical application of the STH2N120K5-2AG in a switched-mode power supply (SMPS) circuit:

1. Drain Connection: Connect the drain terminal of the STH2N120K5-2AG (Pin 2) to the primary winding of the transformer in the SMPS. When the MOSFET is activated, power for the transformer is supplied as current flows from the drain to the source.

2. Source Connection: Connect the source terminal of the STH2N120K5-2AG (Pin 3) to the ground reference of the circuit.

3. Gate Connection: Connect the gate terminal of the STH2N120K5-2AG (Pin 1) to the output of a pulse-width modulation (PWM) controller. The PWM controller controls the on-off switching of the MOSFET, and thus the operation of the SMPS.

4. SMPS Operation: The SMPS operates by varying the duty cycle of the PWM signal. This governs the amount of energy that is transported from the transformer's primary to secondary winding, which in turn regulates the output voltage.

Design Considerations

When designing with the STH2N120K5-2AG, there are several factors to consider:

- Heat Dissipation: Due to the high power handling capability, this device can generate significant heat during operation. Therefore, a proper heat sink or other thermal management strategies may be necessary.

- Gate-Source Voltage: The gate-source voltage should always stay within specified limits to avoid damaging the MOSFET. The maximum Vgs for the STH2N120K5-2AG is ±30V.

- Current Rating: The STH2N120K5-2AG has a maximum continuous drain current of 2A. Make sure your application doesn't go over this threshold.

To conclude, the STH2N120K5-2AG is a high-voltage MOSFET suitable for a variety of power applications. By taking into account operational parameters and heat considerations, designers can maximize the performance and longevity of this device.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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