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Name: STH180N10F3-2
Brand: STMicroelectronics
SKU: STH180N10F3-2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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STMicroelectronics STH180N10F3-2

Part No.:: STH180N10F3-2

Manufacturer:: STMicroelectronics

Package:: H2Pak-2

Datasheet:: STH180N10F3-2.pdf

Description:: MOSFET N-CH 100V 180A H2PAK-2

In Stock:: 2162

Quantity:: Add To Cart

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STH180N10F3-2 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
STripFET™ III
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
180A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
4.5mOhm @ 60A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
114.6 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
6665 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
315W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

STH180N10F3-2 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including STH180N10F3-2 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for STH180N10F3-2 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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STH180N10F3-2 information

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STH180N10F3-2 Typical application Circuitry

STH180N10F3-2

The STH180N10F3-2 is a type of power MOSFET produced by STMicroelectronics. MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) are common in electronics due to their ability to handle significant power and perform well at high frequencies.

Characteristics of the STH180N10F3-2: This STH180N10F3-2 device offers several significant features. It possesses low on-resistance (Rds(on)), which results in less power loss during operation. The drain-to-source voltage is rated at 100V, and the device can handle a continuous drain current of up to 180A

at 25 °C. The low gate charge and low capacitances contribute to efficient switching performance.

Application Scenarios: The STH180N10F3-2 is primarily used in power applications like switched-mode power supplies, motor control circuits, and power factor correction in computer servers and telecommunications. In these applications, the device's high current and voltage handling capabilities and efficient switching make it an excellent choice.

Circuit Connection for a Motor Control

Circuit Consider using the STH180N10F3-2 in a motor control circuit:

1. Drain Connection: The drain terminal of the STH180N10F3-2 (Pin 2) should be connected to one terminal of the motor. Current travels from the drain to the source when the MOSFET is turned on, powering the motor.

2. Source Connection: The source terminal of the STH180N10F3-2 (Pin 3) should be connected to the circuit ground.

3. Gate Connection: The gate terminal of the STH180N10F3-2 (Pin 1) should be connected to a PWM (Pulse Width Modulation) controller. The PWM signal determines the on-off cycle of the MOSFET, controlling the speed of the motor.

4. Motor Control Operation: The duty cycle of the PWM signal can be changed to alter the motor's speed. A higher duty cycle means the MOSFET is on for a larger percentage of the time, which results in a higher motor speed.

Design Considerations

When designing with the STH180N10F3-2, several factors need to be considered:

- Heat Dissipation: Due to the high power handling, the device can get hot during operation. It could be necessary to use a heat sink or other thermal control strategies.

- Gate-Source Voltage: The gate-source voltage must be within the specified limit to avoid damaging the device. The maximum Vgs for the STH180N10F3-2 is ±20V.

- Current Rating: The STH180N10F3-2 can handle a high continuous drain current (up to 180A at 25°C). Ensure your application does not exceed this.

In summary, the STH180N10F3-2 is a high-performing MOSFET, suitable for a variety of power applications. To achieve a dependable and effective design, careful consideration must be paid to the operational limits and thermal factors.

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6. What is the process for return or replacement of STH180N10F3-2?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STH180N10F3-2 we delivered, we will accept the replacement or return of the STH180N10F3-2 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STH180N10F3-2.

(3)The PartNo is unused and only in the original unpacked packaging.

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