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Name: STH12N120K5-2
Brand: STMicroelectronics
SKU: STH12N120K5-2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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STMicroelectronics STH12N120K5-2

Part No.:: STH12N120K5-2

Manufacturer:: STMicroelectronics

Package:: H2Pak-2

Datasheet:: STH12N120K5-2.pdf

Description:: MOSFET N-CH 1200V 12A H2PAK-2

In Stock:: 3703

Quantity:: Add To Cart

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STH12N120K5-2 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
MDmesh™ K5
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
1200 V
Current-ContinuousDrain(Id)@25°C:
12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
690mOhm @ 6A, 10V
Vgs(th)(Max)@Id:
5V @ 100µA
GateCharge(Qg)(Max)@Vgs:
44.2 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
1370 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
250W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

STH12N120K5-2 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including STH12N120K5-2 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for STH12N120K5-2 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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STH12N120K5-2 information

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STH12N120K5-2 Typical application Circuitry

The STH12N120K5-2 is an N-channel 1,200 V, 12 A Power MOS FET from Microelectronics. It belongs to their MD mesh K5 series of high-performance Moses designed for energy-efficient applications. Here is detailed information on how to integrate the STH12N120K5-2 into your circuit:

1. Gate Pin (G): This pin controls the operation of the STH12N120K5-2 MOS FET. To switch on the MOS FET and enable current to flow from Drain to Source, provide voltage to the Gate pin. Use a microcontroller, gate driver, or other suitable components to control the gate voltage based on your application requirements. Incorporate a gate resistor to limit the inrush current when switching the MOS FET on/off and a pull-down resistor to keep the gate at a defined voltage level when not actively driven.

2. Drain Pin (D): Connect the Drain pin to the high voltage side of your load, such as a motor, inductor, or resistor. Ensure that the voltage applied to the Drain pin doesn't exceed the maximum voltage rating (1,200 V) of the STH12N120K5-2. Also, consider using a snubbed circuit or transient voltage suppressor (TVS) diode to protect the MOS FET from voltage spikes during switching events.

3. Source Pin (S): Connect the Source pin to the low voltage side of your load. This pin also serves as the reference for the gate voltage, so connect it to the ground plane of your circuit. In case of high-current applications, use a low-resistance, wide trace or plane for the Source connection to minimize voltage drops and heat generation.

4. Heat Dissipation: When operating, the STH12N120K5-2 might become warm, especially when handling large currents. Attach a heat sink or use a thermal pad to improve heat dissipation and maintain the MOS FET within its safe operating temperature range. Optimize your PCB layout to enhance thermal performance further.

5. Protection Circuits: Use protection components like gate resistors, Zenger diodes, and transient voltage suppressors (TVS) to safeguard the STH12N120K5-2 from overcurrent, overvoltage, and electrostatic discharge (ESD) events.

6. Load Configuration: For load-switching applications, use the STH12N120K5-2 in a low-side configuration by connecting the Drain pin to the load and the Source pin to ground. Alternatively, use it in a high-side configuration by connecting the Source pin to the load and the Drain pin to the high-voltage rail.

When designing your circuit, consult the STH12N120K5-2 data sheet to verify the recommended operating conditions, electrical characteristics, and thermal management guidelines. The proper connection and configuration of the STH12N120K5-2 MOS FET will ensure reliable and efficient performance in your application.

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6. What is the process for return or replacement of STH12N120K5-2?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STH12N120K5-2 we delivered, we will accept the replacement or return of the STH12N120K5-2 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STH12N120K5-2.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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