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Name: STFW3N150
Brand: STMicroelectronics
SKU: STFW3N150
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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STMicroelectronics STFW3N150

Part No.:: STFW3N150

Manufacturer:: STMicroelectronics

Package:: TO-3PF

Datasheet:: STFW3N150.pdf

Description:: MOSFET N-CH 1500V 2.5A ISOWATT

In Stock:: 3961

Quantity:: Add To Cart

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STFW3N150 Specifications

Packaging:
Tube
Series:
PowerMESH™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
1500 V
Current-ContinuousDrain(Id)@25°C:
2.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
9Ohm @ 1.3A, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
29.3 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
939 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
63W (Tc)
OperatingTemperature:
150°C (TJ)
MountingType:
Through Hole

STFW3N150 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including STFW3N150 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for STFW3N150 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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STFW3N150 information

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STFW3N150 Typical application Circuitry

STFW3N150

The STFW3N150 is an N-channel power MOSFET designed for high-voltage, high-current switching applications.

Key Features of STFW3N150:

1. High Voltage Capability: The STFW3N150 is rated for high voltage levels, making it suitable for applications requiring high-voltage switching.

2. Low On-Resistance (RDS(on)): It features low RDS(on) values, allowing it to handle high currents efficiently with minimal voltage drop across the device.

3. Fast Switching Speed: This MOSFET offers rapid switching capabilities, making it ideal for high-frequency switching applications.

4. Avalanche Energy Rating: During switching occurrences, it is made to endure high-energy pulses.

5. Low Gate Threshold Voltage (VGS(th)): Circuits for low-voltage gate drivers can readily drive the MOSFET.

6. TO-247 Package: The package it comes in, TO-247, allows for effective heat dissipation.

Example Application: Flyback Converter Circuit

Let's explore a common application scenario for the STFW3N150: designing a flyback converter for power supply applications.

Circuit Connection:

1. STFW3N150 Drain (Pin 1): Connect this pin to the primary winding of the transformer.

2. STFW3N150 Source (Pin 2): Connect this pin to the input voltage source.

3. Gate Driver: Utilize a gate driver circuit to provide the necessary gate voltage to control the MOSFET's switching.

4. Input Capacitor: Place an input capacitor across the input voltage source for filtering and stability.

Output Stage:

5. Secondary Winding of Transformer: Connect this winding to the load (output) and the diode.

6. Diode: Connect the anode of the diode to the secondary winding and the cathode to the output capacitor.

7. Output Capacitor: Place an output capacitor across the output to filter and stabilize the output voltage.

8. Output Voltage Feedback: Implement feedback control with a voltage divider and operational amplifier (Op-Amp) to regulate the output voltage.

9. Control IC: Use a control IC for pulse-width modulation (PWM) control and protection features.

10. Flyback Transformer: Choose a flyback transformer that best fits the specifications for input and output voltage.

Design Considerations:

1. Gate Driver: Ensure the gate driver circuit provides sufficient voltage and current to switch the MOSFET rapidly.

2. Switching Frequency: Determine the desired switching frequency based on the application's requirements.

3. Transformer Design: Design the transformer for the desired input and output voltages and currents.

4. Snubber Circuit: Implement a snubber circuit to reduce voltage spikes and minimize electromagnetic interference (EMI).

5. Heat Dissipation: To dissipate the heat produced during operation, take into account heat sinking or other cooling techniques.

6. Regulation of Output Voltage: Assure appropriate feedback control to provide consistent regulation of Output Voltage.

7. Protection Circuitry: Include safeguards like overvoltage and overcurrent protection in your

8. Efficiency Optimization: Reduce power losses by optimizing the circuit for maximum efficiency.

In summary, the STFW3N150 MOSFET is suitable for high-voltage, high-current switching applications, such as flyback converters in power supply circuits. When designing a flyback converter using this MOSFET, it is essential to pay attention to gate driving, switching frequency, transformer design, snubber circuit, heat dissipation, output voltage regulation, protection mechanisms, and circuit efficiency to achieve a reliable and efficient power supply solution.

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6. What is the process for return or replacement of STFW3N150?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STFW3N150 we delivered, we will accept the replacement or return of the STFW3N150 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STFW3N150.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations