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Name: STD8N60DM2
Brand: STMicroelectronics
SKU: STD8N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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STMicroelectronics STD8N60DM2

Part No.:: STD8N60DM2

Manufacturer:: STMicroelectronics

Package:: DPAK

Datasheet:: STD8N60DM2.pdf

Description:: MOSFET N-CH 600V 8A DPAK

In Stock:: 3860

Quantity:: Add To Cart

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STD8N60DM2 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
MDmesh™ DM2
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
600 V
Current-ContinuousDrain(Id)@25°C:
8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
600mOhm @ 4A, 10V
Vgs(th)(Max)@Id:
5V @ 100µA
GateCharge(Qg)(Max)@Vgs:
13.5 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
375 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
85W (Tc)
OperatingTemperature:
150°C (TJ)
MountingType:
Surface Mount

STD8N60DM2 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including STD8N60DM2 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for STD8N60DM2 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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STD8N60DM2 information

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STD8N60DM2 Typical application Circuitry

The STD8N60DM2 is a power MOSFET from STMicroelectronics, specifically part of the STDMOS series. These MOSFETs are designed to handle high power and efficiency, characterized by their low on-resistance and high switching performance. The STD8N60DM2 is ideal for a variety of high-power applications, including power supply, motor controllers, and inverter circuits, where efficient power conversion is critical.

1. Power Supply Connection and Voltage Ratings: The STD8N60DM2, being a power MOSFET, is typically used in high-voltage and high-current environments. It features three pins: the Drain (D), the Gate (G), and the Source (S). The Drain is connected to the high-voltage side of the circuit, while the Source is typically connected to the lower voltage side or ground. The Gate pin regulates the amount of current that moves from the Drain to the Source. Current moves from the Drain to the Source when a voltage is provided to the Gate.

2. Pin Configuration for Efficient Operation: In the circuit, the Gate pin serves as the control terminal for the MOSFET. A voltage applied to this pin relative to the Source pin modulates the current flow between the Drain and Source. The Drain pin is connected to the load, and the Source pin is usually connected to the power supply's ground or negative terminal.

3. Application in Power Conversion Circuits: The STD8N60DM2 is commonly used in power conversion applications like AC-DC converters, DC-DC converters, and as a switching element in power supplies and inverters. It is perfect for these applications because of its quick switching rates and low on-resistance.

4. Operational Characteristics and Efficiency: Designed for fast switching and low power loss, the STD8N60DM2 minimizes energy wastage and improves the efficiency of the overall system. This is particularly important in applications involving high power and high frequency.

5. Circuit Design and PCB Layout Considerations: When designing a PCB that includes the STD8N60DM2, it is important to consider the high current and potential high heat generation. The traces connecting the MOSFET should be capable of carrying high currents, and adequate heat sinking should be provided to manage heat dissipation.

6. Compliance with Power MOSFET Standards: The STD8N60DM2 adheres to industry standards for power MOSFETs, ensuring its reliability and performance in high-voltage power applications.

7. Handling and Installation Precautions: Power MOSFETs like the STD8N60DM2 are sensitive to electrostatic discharge (ESD) and thermal stress. Appropriate handling, including ESD precautions, is necessary, and proper soldering techniques should be used to ensure the integrity of the MOSFET in the circuit.

In summary, the STD8N60DM2 from the STDMOS series is a high-performance power MOSFET ideal for applications requiring efficient power conversion and management. Its effective use involves proper power supply connections, accurate pin configuration, application in power conversion circuits, leveraging its high-speed switching and low power loss, careful PCB design for current handling and heat dissipation, compliance with MOSFET standards, and cautious handling during installation. These guidelines ensure that the STD8N60DM2 functions effectively in its intended applications.

STD8N60DM2 FAQ

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6. What is the process for return or replacement of STD8N60DM2?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STD8N60DM2 we delivered, we will accept the replacement or return of the STD8N60DM2 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STD8N60DM2.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations