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Name: STD45P4LLF6AG
Brand: STMicroelectronics
SKU: STD45P4LLF6AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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STMicroelectronics STD45P4LLF6AG

Part No.:: STD45P4LLF6AG

Manufacturer:: STMicroelectronics

Package:: DPAK

Datasheet:: STD45P4LLF6AG.pdf

Description:: MOSFET P-CH 40V 50A DPAK

In Stock:: 2924

Quantity:: Add To Cart

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STD45P4LLF6AG Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101, STripFET™ F6
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
40 V
Current-ContinuousDrain(Id)@25°C:
50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
15mOhm @ 25A, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
65.5 nC @ 10 V
Vgs(Max):
±18V
InputCapacitance(Ciss)(Max)@Vds:
3525 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
58W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

STD45P4LLF6AG this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including STD45P4LLF6AG price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for STD45P4LLF6AG to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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STD45P4LLF6AG information

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STD45P4LLF6AG Typical application Circuitry

STD45P4LLF6AG

The STD45P4LLF6AG is a P-channel power MOSFET designed for various high-performance switching applications. It offers low conduction losses and efficient power handling.

Key Features of STD45P4LLF6AG:

1. P-Channel Enhancement Mode: This MOSFET is a P-channel type, suitable for high-side switching applications.

2. Low On-Resistance (RDS(ON)): With a low RDS(ON), it minimizes conduction losses and ensures efficient power handling.

3. High Current Capability: It can handle high continuous and pulsed currents, making it versatile for power applications.

4. Low Gate Threshold Voltage (VGS(th)): The low VGS(th) allows for easy interfacing with logic-level control signals.

5. Fast Switching Speed: Its fast switching characteristics reduce switching losses, crucial for high-frequency applications.

6. TO-252 Package: The TO-252 package provides good thermal performance and ease of mounting on PCBs.

Example Application: Battery Protection Circuit

Let's explore a common application scenario for the STD45P4LLF6AG: designing a battery protection circuit.

Circuit Connection:

1. STD45P4LLF6AG Pin 1 (Gate): Connect this pin to the gate driver circuitry, which generates the gate voltage to control the MOSFET.

2. STD45P4LLF6AG Pin 2 (Drain): Connect this pin to the positive terminal of the battery.

3. STD45P4LLF6AG Pin 3 (Source): Connect this pin to the load or the positive terminal of the device being powered by the battery.

4. TO-252 Package Tab: The tab of the TO-252 package can be connected to the PCB for heat dissipation.

Design Considerations:

1. Gate Voltage: Ensure that the gate voltage applied to Pin 1 is sufficient to fully turn off the MOSFET when needed. Typically, you need a voltage lower than the gate-source threshold voltage (VGS(th)).

2. Gate Resistor: Include a gate resistor to control the switching speed and prevent voltage spikes.

3. Input Voltage and Current: Ensure that the MOSFET can handle the maximum voltage and current of your battery.

4. Overcurrent Protection: Implement overcurrent protection mechanisms to safeguard the circuit and battery from excessive current.

5. Reverse Voltage Protection: Consider including reverse voltage protection to prevent damage in case of reverse battery connection.

6. Temperature Monitoring: Monitor the temperature of the MOSFET during operation. Adequate thermal management may be required to prevent overheating.

7. Efficiency: Optimize the circuit for high efficiency to minimize power losses.

In summary, the STD45P4LLF6AG is a robust MOSFET suitable for various power applications, including battery protection circuits. When designing a circuit with this MOSFET, pay close attention to gate voltage, gate resistor, input voltage, overcurrent protection, reverse voltage protection, temperature monitoring, and circuit efficiency to ensure proper and reliable battery protection in your specific application.

STD45P4LLF6AG FAQ

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6. What is the process for return or replacement of STD45P4LLF6AG?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STD45P4LLF6AG we delivered, we will accept the replacement or return of the STD45P4LLF6AG only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STD45P4LLF6AG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations