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Name: SQJ415EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ415EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SQJ415EP-T1_GE3

Part No.:: SQJ415EP-T1_GE3

Manufacturer:: Vishay Siliconix

Package:: PowerPAK® SO-8

Datasheet:: SQJ415EP-T1_GE3.pdf

Description:: MOSFET P-CH 40V 30A PPAK SO-8

In Stock:: 2466

Quantity:: Add To Cart

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SQJ415EP-T1_GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101, TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
40 V
Current-ContinuousDrain(Id)@25°C:
30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
14mOhm @ 10A, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
95 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
6000 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
45W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

SQJ415EP-T1_GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SQJ415EP-T1_GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SQJ415EP-T1_GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SQJ415EP-T1_GE3 information

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SQJ415EP-T1_GE3 Typical application Circuitry

The SQJ415EP-T1_GE3 is an N-channel TrenchFET® power MOSFET by Vishay. It's commonly used in switch mode power supplies, motor drive applications, and general switching applications. This article will lead you through the steps required to include the SQJ415EP-T1_GE3 power MOSFET into your design.

1. Gate Connection (G): The gate of the SQJ415EP-T1_GE3 is pin 1. This is where the control signal for turning the MOSFET on or off is applied. Connect this pin to a microcontroller, digital logic, or a gate driver circuit that will provide the appropriate gate voltage (Vgs) for switching.

2. Drain Connection (D): The drain of the SQJ415EP-T1_GE3 is pin 2. This is the MOSFET's output and is linked to the load. The voltage at this point will depend on whether the MOSFET is turned on or off.

3. Source Connection (S): The source of the SQJ415EP-T1_GE3 is pin 3. This is the reference point for the gate voltage and is connected to the ground in most applications.

4. Power Supply and Protection: To protect the SQJ415EP-T1_GE3 from voltage spikes, place a clamping diode (also known as a freewheeling or flyback diode) across the load. Make sure the diode's anode is linked to the drain and the cathode is connected to the power supply's positive side.

5. Resistor Connection: Connect a pull-down resistor from the gate (pin 1) to the ground to ensure the gate voltage is at a defined level when the gate driver or controller is not actively driving it.

6. Thermal Management: The SQJ415EP-T1_GE3 can produce a lot of heat while switching large currents. Ensure proper thermal management by using a suitable heat sink, considering the package's thermal resistance, and providing adequate airflow around the component.

7. Parasitic Capacitance Reduction: To reduce parasitic capacitance in high-speed switching applications, keep the trace lengths to the gate, drain, and source of the SQJ415EP-T1_GE3 as short as possible. Use a ground plane under the component to reduce the loop area.

8. Gate Drive Voltage: Make that the SQJ415EP-T1_GE3's gate drive voltage is within the permitted range. This voltage is crucial for the proper operation of the MOSFET and affects its on-state resistance (Rds(on)).

9. Bypass Capacitor: Put a bypass capacitor near the circuit's power supply pins to reduce high-frequency noise and boost stability.

10. Datasheet Reference: Always refer to the SQJ415EP-T1_GE3 datasheet for specific electrical and thermal characteristics, recommended operating conditions, and other important details that can influence your design.

By following this guide, you can effectively connect the SQJ415EP-T1_GE3 power MOSFET in your circuit and take full advantage of its high-performance switching capabilities.

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6. What is the process for return or replacement of SQJ415EP-T1_GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SQJ415EP-T1_GE3 we delivered, we will accept the replacement or return of the SQJ415EP-T1_GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SQJ415EP-T1_GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

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