SQJ409EP-T1_GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SQJ409EP-T1_GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SQJ409EP-T1_GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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Key Features of SQJ409EP-T1_GE3: The SQJ409EP-T1_GE3 boasts several compelling features. It can handle continuous drain currents up to -20 A and pulsed drain currents up to -80 A, making it robust for various power applications. The MOSFET also operates at a low threshold voltage of -1.2 V to -2.8 V and exhibits a maximum drain-source resistance of 13.5 mOhm when fully activated. Reduced power loss and increased efficiency are the results of its relatively low on-resistance.
Application Scenarios: The SQJ409EP-T1_GE3 MOSFET finds extensive use in power management applications, including load switches, power supplies, motor control, and more, especially where high-speed switching and energy efficiency are required.
Circuit Design
Let's examine the SQJ409EP-T1_GE3 used as a high-side load switch:
1. Source Terminal: The source terminal of the SQJ409EP-T1_GE3 (pin 3) should be connected to the positive power supply rail.
2. Drain Terminal: The drain terminal (pin 2) should be connected to the load. This could be a DC motor, LED array, or anything else that requires a power switch.
3. Gate Terminal: The gate terminal (pin 1) controls the switch. When a voltage level near the power supply voltage is applied to the gate, the SQJ409EP-T1_GE3 switches off. The MOSFET turns on when the gate voltage is quite close to the ground.
4. Load Switching: To activate the load, a low voltage (near ground) is applied to the gate. To deactivate the load, a voltage near the supply voltage is applied.
Design Considerations
Designing circuits with SQJ409EP-T1_GE3 requires special attention:
- Gate Voltage: Ensure that the gate voltage does not exceed the maximum ±20 V to prevent damaging the gate oxide layer.
- Heat Dissipation: Just like with any power component, the SQJ409EP-T1_GE3 can generate heat under operation. Adequate cooling mechanisms should be in place.
- ESD Protection: MOSFETs are sensitive to electrostatic discharge (ESD). ESD damage should be prevented using precautions.
In conclusion, the SQJ409EP-T1_GE3 is a potent P-Channel MOSFET with diverse applications in power management and beyond. Given its performance characteristics, it's critical to observe proper design rules to fully exploit its potential and ensure its longevity.
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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
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