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Name: SPP11N80C3XKSA1
Brand: Infineon Technologies
SKU: SPP11N80C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies SPP11N80C3XKSA1

Part No.:: SPP11N80C3XKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO220-3-1

Datasheet:: SPP11N80C3XKSA1.pdf

Description:: MOSFET N-CH 800V 11A TO220-3

In Stock:: 4995

Quantity:: Add To Cart

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SPP11N80C3XKSA1 Specifications

Packaging:
Tube
Series:
CoolMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
800 V
Current-ContinuousDrain(Id)@25°C:
11A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
450mOhm @ 7.1A, 10V
Vgs(th)(Max)@Id:
3.9V @ 680µA
GateCharge(Qg)(Max)@Vgs:
85 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1600 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
156W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

SPP11N80C3XKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SPP11N80C3XKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SPP11N80C3XKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SPP11N80C3XKSA1 information

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SPP11N80C3XKSA1 Typical application Circuitry

The SPP11N80C3XKSA1 is a high-performance component belonging to a series of power MOSFETs, specifically designed for efficient operation in high-voltage and high-current applications. It is typically utilized in power conversion systems, such as power supplies, inverters, and motor control circuits, where its ability to handle large amounts of power with minimal losses is of paramount importance.

1. Series Description and Characteristics: As part of a series of power MOSFETs, the SPP11N80C3XKSA1 is engineered to offer excellent power handling capabilities. These MOSFETs are known for their high breakdown voltage and low on-state resistance, making them suitable for applications that require efficient power handling at high voltages. Their construction allows for fast switching, which is a critical aspect in reducing energy losses during the transition states in power electronics.

2. Pin Configuration and Electrical Connections: The SPP11N80C3XKSA1 typically features a standard three-pin MOSFET configuration, which includes the Drain (D), Gate (G), and Source (S) pins. The Drain is the terminal through which the main current exits the MOSFET, and it is usually connected to the high-voltage side of the circuit. The Source pin is where the current enters the MOSFET, connected to the lower potential side of the circuit. The Gate pin functions as a control terminal, modulating the current flow between the Drain and Source. The MOSFET must be operated properly by supplying a voltage to the Gate relative to the Source in order to regulate the current flow via the Drain.

3. Implementation in Circuit Designs: Incorporating the SPP11N80C3XKSA1 into a circuit requires careful consideration of its voltage and current specifications to prevent excessive stress on the device. Thermal management is also crucial due to the heat generated during operation. Therefore, implementing appropriate heat sinks or cooling mechanisms is often necessary to maintain optimal performance and longevity.

4. Typical Applications and Functional Efficacy: The SPP11N80C3XKSA1 is widely employed in various power electronic applications, including switching power supplies, DC-AC inverters, and motor drives. Its high efficiency in handling large currents and voltages, coupled with rapid switching capabilities, makes it a preferred choice for these applications. The device's design helps minimize resistance and switching losses, contributing to overall system efficiency.

5. Circuit Layout and Design Optimization: In designing circuits that include the SPP11N80C3XKSA1, minimizing the trace lengths for high-current paths, particularly between the Drain and Source, is crucial. This minimizes resistance and inductive losses. The design of the Gate drive circuitry is also important to ensure fast and reliable switching.

6. Handling and Precautionary Measures: Like other high-power semiconductor devices, the SPP11N80C3XKSA1 must be handled with care to prevent damage. This includes taking precautions against electrostatic discharge (ESD) during handling and installation.

In conclusion, the SPP11N80C3XKSA1, a member of the power MOSFET family, is vital in high-voltage, high-current applications requiring efficient power handling. Its three-pin design (Drain, Gate, Source) facilitates its integration into power electronic circuits. Attention to thermal management, efficient Gate driving, and optimized circuit design are key to harnessing the full capabilities of this MOSFET in power conversion and control systems.

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6. What is the process for return or replacement of SPP11N80C3XKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SPP11N80C3XKSA1 we delivered, we will accept the replacement or return of the SPP11N80C3XKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SPP11N80C3XKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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