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Name: SIS862DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS862DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SIS862DN-T1-GE3

Part No.:: SIS862DN-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: PowerPAK® 1212-8

Datasheet:: SIS862DN-T1-GE3.pdf

Description:: MOSFET N-CH 60V 40A PPAK1212-8

In Stock:: 3174

Quantity:: Add To Cart

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SIS862DN-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
40A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
8.5mOhm @ 20A, 10V
Vgs(th)(Max)@Id:
2.6V @ 250µA
GateCharge(Qg)(Max)@Vgs:
32 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1320 pF @ 30 V
FETFeature:
-
PowerDissipation(Max):
3.7W (Ta), 52W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SIS862DN-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SIS862DN-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SIS862DN-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SIS862DN-T1-GE3 information

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SIS862DN-T1-GE3 Typical application Circuitry

The SIS862DN-T1-GE3 is a specific type of electronic component known as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). To provide a comprehensive overview of its functionality, applications, parameters, and a detailed circuit connection example, I will proceed as follows:

1. Functionality of SIS862DN-T1-GE3: This MOSFET is typically used for switching and amplifying electronic signals. It's a type of transistor that controls the flow of electrical energy and can operate at high speeds, making it suitable for various applications in power management and signal processing.

2. Application Scenarios: The SIS862DN-T1-GE3 is versatile and can be used in applications such as power supply circuits, motor control systems, and as a switch in various electronic devices including computers, smartphones, and other consumer electronics.

3. Parameter Features: Key parameters of this MOSFET include its drain-source voltage, gate-source voltage, continuous drain current, power dissipation, and switching speed. These characteristics determine the efficiency, performance, and suitability of the MOSFET for specific applications.

4. Circuit Connection Example: Let's take the application of a simple switching circuit as an example.

- Power Connection: Connect the drain (D) of the SIS862DN-T1-GE3 to the positive terminal of the power supply.

- Load Connection: Connect the load (e.g., a motor or an LED) between the source (S) of the MOSFET and the ground.

- Control Signal: Apply the control signal to the gate (G). This signal will regulate the flow of current through the MOSFET.

- Gate Resistor: A resistor should be connected in series with the gate to limit the gate current.

- Programming Pins: For programming and control purposes, specific pins such as G, D, and S are crucial. Depending on the application, additional circuit elements like pull-up or pull-down resistors might be necessary.

5. Design Considerations: When designing a circuit with the SIS862DN-T1-GE3, consider the maximum voltage and current ratings to avoid damage. It may also be necessary to use suitable heat sinking or cooling devices because heat dissipation is very important. Additionally, the switching frequency and gate drive requirements should match the MOSFET's capabilities to ensure efficient operation.

Incorporating the SIS862DN-T1-GE3 into your design requires careful consideration of these factors to optimize performance and reliability.

Note that this summary is predicated on general understanding of MOSFETs and common application scenarios. For detailed and specific information about the SIS862DN-T1-GE3, it's always recommended to consult the datasheet provided by the manufacturer.

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6. What is the process for return or replacement of SIS862DN-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SIS862DN-T1-GE3 we delivered, we will accept the replacement or return of the SIS862DN-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SIS862DN-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations