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Name: SIR873DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR873DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SIR873DP-T1-GE3

Part No.:: SIR873DP-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: PowerPAK® SO-8

Datasheet:: SIR873DP-T1-GE3.pdf

Description:: MOSFET P-CH 150V 37A PPAK SO-8

In Stock:: 2970

Quantity:: Add To Cart

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SIR873DP-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET® Gen IV
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
150 V
Current-ContinuousDrain(Id)@25°C:
37A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
47.5mOhm @ 10A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
48 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1805 pF @ 75 V
FETFeature:
-
PowerDissipation(Max):
104W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SIR873DP-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SIR873DP-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SIR873DP-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SIR873DP-T1-GE3 information

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SIR873DP-T1-GE3 Typical application Circuitry

The SIR873DP-T1-GE3 is a type of N-Channel MOSFET developed by Vishay. MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are key components used across a multitude of electronic circuits, where they act as rapid switches and signal amplifiers.

The SIR873DP-T1-GE3 boasts several noteworthy characteristics:

1. Low On-Resistance: This MOSFET features a low on-resistance, which enables efficient operation by reducing power losses during the switching process.

2. Fast Switching Speed: Typical of MOSFETs, the SIR873DP-T1-GE3 is designed for high-speed switching.

3. High Power Dissipation: The SIR873DP-T1-GE3 can handle a significant degree of power dissipation, making it a prime candidate for demanding applications.

4. Packaging: This particular MOSFET comes in a PowerPAK® SO-8 package, offering a compact solution ideal for space-conscious designs.

The SIR873DP-T1-GE3 finds usage across a variety of applications such as power management in industrial systems and telecommunications, load switching, synchronous rectification in switched-mode power supplies, and DC/DC converters.

Let's look at the SIR873DP-T1-GE3 in a load switching application for a detailed connection setup.

Setting up the SIR873DP-T1-GE3:

- Drain Connection: The drain (Pins 5, 6, 7, 8) should be linked to the voltage supply (VCC) of your electronic circuit.

- Gate Connection: The gate (Pin 4) ought to be coupled to a control signal responsible for governing the MOSFET's switching operation.

- Source Connection: Attach the source (Pins 1, 2, 3) to the load that the MOSFET is powering.

- Thermal Pad: Connect the thermal pad (situated at the bottom of the chip) to your circuit's ground, facilitating the dissipation of heat.

During the design phase of a circuit involving the SIR873DP-T1-GE3, several important considerations come to the fore:

- Handling Gate Drive: The gate voltage of a MOSFET should exceed the threshold voltage to ensure that the MOSFET turns on completely.

A gate voltage that doesn't meet this requirement can increase on-resistance, which, in turn, might lead to unnecessary power loss.

- Thermal Management: As MOSFETs can handle a high degree of power dissipation, it's important to have effective thermal management strategies such as heat sinks or thermal vias in place to prevent overheating.

- Circuit Safeguards: Introducing safeguards against overvoltage and overcurrent can help protect the MOSFET from potential harm during abnormal operational circumstances.

- PCB Layout: The layout of the printed circuit board (PCB) can significantly affect the performance of high-speed applications.

Therefore, it is advisable to keep traces connecting to the MOSFET as short as possible to decrease parasitic inductance and capacitance.

SIR873DP-T1-GE3 FAQ

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3. Are the SIR873DP-T1-GE3 price and inventory displayed accurate?

The price and inventory of SIR873DP-T1-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of SIR873DP-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SIR873DP-T1-GE3 we delivered, we will accept the replacement or return of the SIR873DP-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SIR873DP-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations