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Name: SI7431DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7431DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI7431DP-T1-GE3

Part No.:: SI7431DP-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: PowerPAK® SO-8

Datasheet:: SI7431DP-T1-GE3.pdf

Description:: MOSFET P-CH 200V 2.2A PPAK SO-8

In Stock:: 3234

Quantity:: Add To Cart

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SI7431DP-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
200 V
Current-ContinuousDrain(Id)@25°C:
2.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
174mOhm @ 3.8A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
135 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
-
FETFeature:
-
PowerDissipation(Max):
1.9W (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI7431DP-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI7431DP-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI7431DP-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI7431DP-T1-GE3 information

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SI7431DP-T1-GE3 Typical application Circuitry

SI7431DP-T1-GE3

The SI7431DP-T1-GE3 is a type of P-Channel MOSFET developed by Vishay Intertechnology. MOSFETs, or Metal Oxide Semiconductor Field-Effect Transistors, are critical components used in various electronic circuits for their capability to switch and amplify electronic signals.

Key characteristics of the SI7431DP-T1-GE3 encompass:

1. Low On-Resistance: The SI7431DP-T1-GE3 possesses a low on-resistance (RDS(ON)), promoting efficiency by minimizing power losses.

2. Fast Switching Speed: As a fundamental attribute of MOSFETs, the SI7431DP-T1-GE3 can swiftly turn on and off.

3. High Power Dissipation: The SI7431DP-T1-GE3 is capable of handling a high level of power dissipation, making it ideal for heavy-duty applications.

4. Packaging: This MOSFET is housed in a PowerPAK® SO-8 package, a compact solution that is convenient for space-constrained applications.

The SI7431DP-T1-GE3 can be utilized in an array of applications, including load switching, power management in telecommunications and industrial systems, DC/DC converters, and synchronous rectification in switched-mode power supplies.

As an illustration, let's explore the use of the SI7431DP-T1-GE3 as a load switch.

Connecting the SI7431DP-T1-GE3:

- Drain Terminal: Connect the drain terminal (Pins 5, 6, 7, 8) to the supply voltage (VCC) of your circuit.

- Gate Terminal: The gate terminal (Pin 4) should be connected to a control signal that can regulate the MOSFET's switching activity.

- Source Terminal: Connect the source terminal (Pins 1, 2, 3) to the load that the MOSFET is to power.

- Thermal Pad: Connect the thermal pad (located at the bottom of the package) to the circuit ground to facilitate heat dissipation.

When designing a circuit with the SI7431DP-T1-GE3, there are several important considerations:

- Gate Drive Circuit: A MOSFET's gate voltage should be sufficiently high to overcome the threshold voltage and fully turn on the MOSFET. A lower than required gate voltage could lead to higher on-resistance, causing unnecessary power loss.

- Heat Management: Given that MOSFETs can dissipate a high amount of power, effective heat management strategies, such as installing heatsinks or creating thermal vias, are crucial to prevent overheating.

- Circuit Protection: Incorporating overvoltage and overcurrent protection mechanisms can safeguard the MOSFET from potential damage during abnormal conditions.

- PCB Layout: The layout of the PCB can greatly influence the performance of high-speed applications. Keeping the traces connecting to the MOSFET as short as possible is recommended to reduce parasitic inductance and capacitance.

SI7431DP-T1-GE3 FAQ

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6. What is the process for return or replacement of SI7431DP-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI7431DP-T1-GE3 we delivered, we will accept the replacement or return of the SI7431DP-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI7431DP-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations