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Name: SI4435DDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4435DDY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI4435DDY-T1-GE3

Part No.:: SI4435DDY-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: 8-SOIC

Datasheet:: SI4435DDY-T1-GE3.pdf

Description:: MOSFET P-CH 30V 11.4A 8SO

In Stock:: 3148

Quantity:: Add To Cart

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SI4435DDY-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
11.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
24mOhm @ 9.1A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
50 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1350 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta), 5W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI4435DDY-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI4435DDY-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI4435DDY-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI4435DDY-T1-GE3 information

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SI4435DDY-T1-GE3 Typical application Circuitry

SI4435DDY-T1-GE3

The SI4435DDY-T1-GE3 is a P-Channel MOSFET designed for various applications, particularly in power management scenarios. Its key features and typical applications will be discussed, along with a detailed example of how it can be used in a specific circuit design.

Key Features of SI4435DDY-T1-GE3:

- Voltage Rating: The SI4435DDY-T1-GE3 typically operates at a -30V drain-source voltage, making it suitable for low to medium voltage applications.

- Current Handling: It can handle a continuous drain current of around -9.5A, which is substantial for its size.

- Low RDS(on): It features a low on-resistance, typically around 0.0195 ohms, ensuring efficient operation with minimal heat generation.

- Package: Housed in a compact SOP-8 package, it is ideal for space-constrained applications.

Application Scenarios:

1. Power Supply Regulation: Commonly used in the power supply circuits for regulating and switching.

2. Motor Control: Utilized in controlling motor speeds and directions in electronic devices.

3. Battery Management: Essential in circuits for battery charging and power management in portable devices.

Circuit Integration Example: Battery Charging Circuit

Circuit Design Considerations:

- Voltage Compatibility: Ensure the charging voltage matches the MOSFET's voltage rating.

- Current Limiting: Incorporate a current limiting resistor to prevent excessive current.

- Heat Dissipation: Implement adequate heat sinking to manage thermal load.

Circuit Connection Detail:

- Gate Connection (Pin 1): Connect to a microcontroller's PWM output for controlling the charging rate.

- Source Connection (Pin 2-4): Connect to the ground of the power source.

- Drain Connection (Pin 5-8): Connect to the negative terminal of the battery being charged.

- Programming Pins for Charging Control: Link microcontroller pins to the MOSFET's gate for precise control over the charging process.

Design Considerations:

1. Thermal Management: Proper heat sinking is crucial due to heat generation during operation.

2. Gate Voltage Level: Ensure the gate voltage is within the MOSFET's threshold limits to avoid damage.

3. Circuit Protection: Implement over-voltage and over-current protection mechanisms to safeguard the MOSFET and the circuit.

By integrating four SI4435DDY-T1-GE3 MOSFETs in the design, you can achieve efficient power management in a battery charging application, ensuring reliable and safe operation. Remember, the key is to match the MOSFET's specifications with the application requirements, considering all the mentioned aspects for a successful circuit design.

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6. What is the process for return or replacement of SI4435DDY-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI4435DDY-T1-GE3 we delivered, we will accept the replacement or return of the SI4435DDY-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI4435DDY-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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