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Name: SI2337DS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2337DS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI2337DS-T1-GE3

Part No.:: SI2337DS-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: SOT-23-3 (TO-236)

Datasheet:: SI2337DS-T1-GE3.pdf

Description:: MOSFET P-CH 80V 2.2A SOT23-3

In Stock:: 2164

Quantity:: Add To Cart

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SI2337DS-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
80 V
Current-ContinuousDrain(Id)@25°C:
2.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
270mOhm @ 1.2A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
17 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
500 pF @ 40 V
FETFeature:
-
PowerDissipation(Max):
760mW (Ta), 2.5W (Tc)
OperatingTemperature:
-50°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI2337DS-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2337DS-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2337DS-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI2337DS-T1-GE3 information

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SI2337DS-T1-GE3 Typical application Circuitry

SI2337DS-T1-GE3

SI2337DS-T1-GE3 is a P-Channel MOSFET, commonly used in power management and signal switching applications. This type of MOSFET is prevalent in scenarios that require efficient power conversion and low-voltage driving.

Application Scenarios

SI2337DS-T1-GE3 can be used in various applications, such as:

- Power management in portable devices

- Low-voltage power switches

- Battery charging circuits

- Signal switching

Parameter Features

The main parameter features of SI2337DS-T1-GE3 include:

- P-Channel MOSFET

- Low threshold voltage

- High current handling capacity

- Low on-resistance

Specific Application Scenario and Circuit Connection

Choosing "power management in portable devices" as the application scenario, the following details the circuit connection method for SI2337DS-T1-GE3 in this scenario.

Power Switching

Function Summary: In portable devices, SI2337DS-T1-GE3 can be used for automatic switching between power sources.

1. Connect Battery: Connect the positive terminal of the battery to the Source pin of SI2337DS-T1-GE3.

2. Connect Load: Connect the positive terminal of the load to the Drain pin of SI2337DS-T1-GE3.

3. Control Gate: Connect the control signal to the Gate pin to control the MOSFET's conduction and cutoff.

Circuit Protection

Function Summary: Use SI2337DS-T1-GE3 for overcurrent protection.

1. Current Sensing Resistor: Insert a low-value sensing resistor between the Source pin and the battery.

2. Detection Circuit: Monitor the current by detecting the voltage difference across the sensing resistor, connected to a control circuit.

3. Control MOSFET: When excessive current is detected, the control circuit will turn off the Gate pin of SI2337DS-T1-GE3, thereby protecting the circuit.

Considerations in Circuit Design

When designing a circuit with SI2337DS-T1-GE3, the following issues should be considered:

1. Threshold Voltage: Ensure that the control signal can effectively switch the MOSFET on and off.

2. Heat Dissipation: As MOSFETs may generate considerable heat under high current, heat dissipation is essential.

3. Current Capacity: Ensure that the MOSFET's current handling capacity meets the circuit requirements.

4. Voltage Levels: Ensure that the MOSFET can operate normally at the working voltage of the circuit.

In summary, as a P-Channel MOSFET, the application of SI2337DS-T1-GE3 in scenarios like power management in portable devices requires meticulous circuit design and a deep understanding of its parameter characteristics.

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6. What is the process for return or replacement of SI2337DS-T1-GE3?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI2337DS-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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