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Name: SI2333DS-T1-E3
Brand: Vishay Siliconix
SKU: SI2333DS-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI2333DS-T1-E3

Part No.:: SI2333DS-T1-E3

Manufacturer:: Vishay Siliconix

Package:: SOT-23-3 (TO-236)

Datasheet:: SI2333DS-T1-E3.pdf

Description:: MOSFET P-CH 12V 4.1A SOT23-3

In Stock:: 2502

Quantity:: Add To Cart

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SI2333DS-T1-E3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
12 V
Current-ContinuousDrain(Id)@25°C:
4.1A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
1.8V, 4.5V
RdsOn(Max)@IdVgs:
32mOhm @ 5.3A, 4.5V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
18 nC @ 4.5 V
Vgs(Max):
±8V
InputCapacitance(Ciss)(Max)@Vds:
1100 pF @ 6 V
FETFeature:
-
PowerDissipation(Max):
750mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI2333DS-T1-E3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2333DS-T1-E3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2333DS-T1-E3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI2333DS-T1-E3 information

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SI2333DS-T1-E3 Typical application Circuitry

SI2333DS-T1-E3

The SI2333DS-T1-E3 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip with various applications in electronics. It is often used for switching and amplification purposes in low-power circuits. This chip is known for its small size, low power consumption, and excellent performance in various applications.Key Parameters and Features.

- Part Number: SI2333DS-T1-E3

- Type: P-channel MOSFET

- Voltage Rating (VDS): Typically -20V

- Continuous Drain Current (ID): Typically -2.3A

- On-Resistance (RDS(ON)): Typically 0.12 ohms

- Package: SOT-23Application Scenario: Battery Protection CircuitIn this example, we'll design a battery protection circuit using the SI2333DS-T1-E3 to prevent over-discharge of a lithium-ion battery. This circuit is essential to ensure the safe operation of rechargeable batteries, prolong their lifespan, and prevent damage due to deep discharge.Circuit Overview.

- We will use the SI2333DS-T1-E3 MOSFET to control the battery's connection to the load.

- The MOSFET disconnects the load to avoid over-discharge when the battery voltage falls below a predetermined threshold.Detailed Circuit Connection:

1. Battery Connection: Attach the battery's positive terminal to the SI2333DS-T1-E3's Drain (D) pin.

2. Load Connection: Connect the positive terminal of the load (your application) to the Source (S) pin of the SI2333DS-T1-E3.

3. Gate Resistor (RG): Connect a resistor (e.g., 10k ohms) between the Gate (G) pin and the ground (0V) to ensure that the MOSFET remains off when the circuit is powered up.

4. Voltage Divider (R1 and R2): Create a voltage divider using two resistors (R1 and R2) to monitor the battery voltage.Attach one end of R1 to the positive terminal of the battery and the other end to the intersection of R1 and R2. Attach R2's opposite end to ground (0V).

5. Voltage Reference (Zener Diode): Connect a Zener diode with a voltage rating slightly above the desired battery discharge threshold across R2. Attach the Zener diode's cathode to the intersection of R1 and R2.

6. Gate-to-Source Connection: Connect the Gate (G) pin to the junction of R2 and the cathode of the Zener diode.

- The voltage threshold for disconnecting the load can be set by choosing an appropriate Zener diode voltage.

- Ensure that the battery voltage is within the specified range of the SI2333DS-T1-E3 to avoid damaging the MOSFET.

- Choose appropriate resistor values for the voltage divider to match your desired threshold voltage.

- Make sure that the voltage levels at the Gate pin are within the MOSFET's specifications to ensure reliable operation.Keywords: SI2333DS-T1-E3, Battery Protection Circuit, MOSFET, Over-discharge Prevention.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI2333DS-T1-E3.

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