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Name: SI2333DDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2333DDS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI2333DDS-T1-GE3

Part No.:: SI2333DDS-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: SOT-23-3 (TO-236)

Datasheet:: SI2333DDS-T1-GE3.pdf

Description:: MOSFET P-CH 12V 6A SOT23-3

In Stock:: 3129

Quantity:: Add To Cart

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SI2333DDS-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
12 V
Current-ContinuousDrain(Id)@25°C:
6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
1.5V, 4.5V
RdsOn(Max)@IdVgs:
28mOhm @ 5A, 4.5V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
35 nC @ 8 V
Vgs(Max):
±8V
InputCapacitance(Ciss)(Max)@Vds:
1275 pF @ 6 V
FETFeature:
-
PowerDissipation(Max):
1.2W (Ta), 1.7W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI2333DDS-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2333DDS-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2333DDS-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI2333DDS-T1-GE3 information

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SI2333DDS-T1-GE3 Typical application Circuitry

SI2333DDS-T1-GE3

The SI2333DDS-T1-GE3 is a Field-Effect Transistor (FET) typically used in power management applications. It's known for its efficiency in handling power and its ability to switch quickly, making it ideal for applications like power supplies, DC-DC converters, and load switch applications.

Application Scenarios and Parameters:

In terms of parameters, this FET is characterized by its low on-resistance and high current handling capability. It operates effectively in environments requiring high power density and energy efficiency.

1. Power Supply Design: In a power supply circuit, the SI2333DDS-T1-GE3 can be used as a switch in the conversion process, efficiently converting voltage levels while minimizing losses.

2. DC-DC Converter: In DC-DC conversion, this FET can be utilized to switch current at high frequencies, aiding in the efficient transformation of DC power from one voltage level to another.

Detailed Circuit Connection: Example in a DC-DC Converter

- Gate Connection: The gate of the SI2333DDS-T1-GE3 (usually pin 1) should be connected to the PWM output of a controller IC. This controls the switching operation of the FET.

- Drain Connection: The drain (pin 2) is typically connected to the high side of the load or the input voltage source in the case of a step-down converter.

- Source Connection: The source (pin 3) is connected to the ground or the low side of the load.

- Programming and Firmware Upload: If a microcontroller is used to control the DC-DC converter, the relevant pins for programming (usually SPI or I2C) should be connected to the microcontroller. For instance, MOSI, MISO, SCK for SPI.

Design Considerations:

When designing a circuit with the SI2333DDS-T1-GE3, several factors need to be considered:

- Heat Dissipation: Due to power losses, the FET can get hot. Adequate heat sinking or thermal management is essential.

- Drive Voltage: Ensure the gate drive voltage is within the specified range for optimal performance.

- Switching Frequency: Higher frequencies can lead to better performance but may increase heat and electromagnetic interference (EMI).

- Protection: Implementing over-current and over-voltage protection is crucial to prevent damage to the FET and the circuit.

In conclusion, the SI2333DDS-T1-GE3 is a versatile FET suitable for high-efficiency power management applications. Its application in circuits like DC-DC converters requires careful consideration of connections, heat management, and protective measures to ensure optimal performance and longevity.

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6. What is the process for return or replacement of SI2333DDS-T1-GE3?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI2333DDS-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

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