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Name: SI2323DS-T1-E3
Brand: Vishay Siliconix
SKU: SI2323DS-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Vishay Siliconix SI2323DS-T1-E3

Part No.:: SI2323DS-T1-E3

Manufacturer:: Vishay Siliconix

Package:: SOT-23-3 (TO-236)

Datasheet:: SI2323DS-T1-E3.pdf

Description:: MOSFET P-CH 20V 3.7A SOT23-3

In Stock:: 3669

Quantity:: Add To Cart

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SI2323DS-T1-E3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
20 V
Current-ContinuousDrain(Id)@25°C:
3.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
1.8V, 4.5V
RdsOn(Max)@IdVgs:
39mOhm @ 4.7A, 4.5V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
19 nC @ 4.5 V
Vgs(Max):
±8V
InputCapacitance(Ciss)(Max)@Vds:
1020 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
750mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI2323DS-T1-E3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2323DS-T1-E3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2323DS-T1-E3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI2323DS-T1-E3 information

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SI2323DS-T1-E3 Typical application Circuitry

The SI2323DS-T1-E3 is a distinct member of the field-effect transistor (FET) family, produced by Vishay Siliconix. Renowned for its efficiency in power management, this particular transistor is highly utilized in portable and power-sensitive devices, including mobile phones, laptops, and power supply systems.

1. Electrical Connection Guidelines: The SI2323DS-T1-E3 operates efficiently in a specific voltage range. It is critical to connect its three pins accurately: the Source (S), the Drain (D), and the Gate (G). The Source pin should be connected to the ground level, while the Drain pin is used for the load connection. The voltage provided to the Gate controls the flow between the Drain and Source. Respecting these links is essential to avoid possible harm or less than ideal performance.

2. Gate Voltage and Drive Characteristics: The transistor's operation hinges on the voltage applied to the Gate. This voltage regulates the current that flows between the Drain and the Source by acting as a switch. Precise control of the Gate voltage is essential to achieve the desired switching behavior, with the consideration that excessive voltage can harm the transistor.

3. Current Flow and Load Management: The SI2323DS-T1-E3 is engineered to handle significant current flow, making it suitable for high-load applications. It's essential to comprehend the maximum current capacity and thermal properties for secure and effective functioning. Ensuring that the current through the device does not exceed its ratings is crucial to avoid overheating or failure.

4. Circuit Design and Integration: Incorporating the SI2323DS-T1-E3 into a printed circuit board (PCB) demands careful planning. The layout should accommodate its small form factor while providing sufficient space for heat dissipation and reducing the risk of short circuits. The PCB design should reflect the transistor's pin arrangement and be compatible with the overall electrical requirements of the application.

5. Thermal Management and Protection: The SI2323DS-T1-E3, like all semiconductors, is sensitive to temperature. Efficient heat management is key to maintaining its longevity and performance. Additionally, protecting the transistor from electrostatic discharge (ESD) and overcurrent conditions is essential to preserve its functionality.

6. Applications and Versatility: The versatility of the SI2323DS-T1-E3 lies in its ability to perform in various applications, ranging from power management to signal processing. Its high efficiency and low power dissipation make it an ideal choice for portable electronics where power conservation is a priority.

In summary, the SI2323DS-T1-E3 is a crucial component in circuits requiring effective power management and switching capabilities. Proper implementation of this transistor involves meticulous attention to electrical connections, managing Gate voltage, understanding current capacities, ensuring robust circuit design, focusing on thermal management, and considering its broad range of applications. Adherence to these guidelines guarantees that the SI2323DS-T1-E3 operates at its peak performance in its designated roles.

SI2323DS-T1-E3 FAQ

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3. Are the SI2323DS-T1-E3 price and inventory displayed accurate?

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6. What is the process for return or replacement of SI2323DS-T1-E3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI2323DS-T1-E3 we delivered, we will accept the replacement or return of the SI2323DS-T1-E3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI2323DS-T1-E3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations