SI2319CDS-T1-GE3

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Vishay Siliconix SI2319CDS-T1-GE3

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Part No.:
SI2319CDS-T1-GE3
Manufacturer:
Vishay Siliconix
Package:
SOT-23-3 (TO-236)
Datasheet:
SI2319CDS-T1-GE3.pdf
Description:
MOSFET P-CH 40V 4.4A SOT23-3
In Stock:
2913
Quantity:
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    SI2319CDS-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2319CDS-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2319CDS-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    SI2319CDS-T1-GE3 informationSI2319CDS-T1-GE3 information

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    SI2319CDS-T1-GE3 Typical application Circuitry

    SI2319CDS-T1-GE3

    The SI2319CDS-T1-GE3 is a discrete semiconductor product by Vishay Siliconix, specifically a P-channel power MOSFET. It is designed for surface mounting with a SOT-23-3 (TO-236) package. This MOSFET is capable of handling a drain to source voltage (Vdss) of 40V and offers a continuous drain current (Id) at 25°C. The device features a maximum Rds (on-resistance) of 77mOhm at 3.1A and 10V, and the gate-source threshold voltage (Vgs(th)) is 2.5V at 250µA. Its maximum gate charge (Qg) is 21 nC at 10 V. The power dissipation for this MOSFET is 1.25W (Ta) and 2.5W (Tc), and it operates within a temperature range of -55°C to 150°C.

    Application Scenario: Power Switching Circuit

    Circuit Design:

    The SI2319CDS-T1-GE3 can be effectively used in a power switching circuit. This application typically involves controlling the flow of power to a load, such as a motor or an LED array.

    1. Power Source:

    - The MOSFET can be connected to a DC power source, with the voltage rating not exceeding the Vdss of 40V.

    2. Load Connection:

    - The load (e.g., a motor) should be connected between the power source and the drain of the MOSFET.

    3. Gate Control:

    - A gate driving circuit or a microcontroller can be connected to the gate of the MOSFET to control its on and off states. The gate voltage should be carefully managed to not exceed the maximum Vgs of ±20V.

    4. Source Pin:

    - The source pin of the MOSFET should be connected to the ground.

    5. Heat Management:

    - Given the power dissipation ratings (1.25W at ambient temperature and 2.5W at case temperature), appropriate heat sinking or cooling mechanisms should be considered, especially in high-power applications.

    6. Protection:

    - Implement protection mechanisms like a flyback diode across the load, especially for inductive loads, to prevent voltage spikes that might damage the MOSFET.

    7. Signal Isolation:

    - If controlled by a microcontroller or any sensitive electronics, opto-isolators or similar isolation techniques should be used to protect the control circuitry from any power spikes or noise from the power circuit.

    Design Considerations:

    When designing with the SI2319CDS-T1-GE3, several factors must be considered:

    - Voltage and Current Ratings: Ensure that the applied voltages and currents are within the specified limits of the MOSFET.

    - Thermal Management: Adequate heat sinking is crucial for reliability, especially under high power dissipation scenarios.

    - Gate Drive Requirements: Appropriate gate drive circuitry must be implemented to ensure efficient switching without exceeding the gate voltage limits.

    - Protection Circuits: Implementing protective elements like snubber circuits or flyback diodes can enhance the circuit's robustness.

    In summary, the SI2319CDS-T1-GE3 MOSFET is suitable for applications requiring a P-channel MOSFET with a Vdss of 40V, a continuous drain current capability, and efficient power management. Its application in a power switching circuit exemplifies its utility in controlling power flow to various loads, with an emphasis on careful design to adhere to its electrical and thermal limits.

    SI2319CDS-T1-GE3 FAQ

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    3. Are the SI2319CDS-T1-GE3 price and inventory displayed accurate?

    The price and inventory of SI2319CDS-T1-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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    6. What is the process for return or replacement of SI2319CDS-T1-GE3?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI2319CDS-T1-GE3 we delivered, we will accept the replacement or return of the SI2319CDS-T1-GE3 only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of SI2319CDS-T1-GE3.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

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