SI2309CDS-T1-GE3

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Vishay Siliconix SI2309CDS-T1-GE3

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Part No.:
SI2309CDS-T1-GE3
Manufacturer:
Vishay Siliconix
Package:
SOT-23-3 (TO-236)
Datasheet:
SI2309CDS-T1-GE3.pdf
Description:
MOSFET P-CH 60V 1.6A SOT23-3
In Stock:
3753
Quantity:
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  • Purchase and inquiryPurchase and inquiry

    SI2309CDS-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2309CDS-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2309CDS-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    SI2309CDS-T1-GE3 informationSI2309CDS-T1-GE3 information

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    SI2309CDS-T1-GE3 Typical application Circuitry

    SI2309CDS-T1-GE3

    The SI2309CDS-T1-GE3 is a P-Channel enhancement-mode Field Effect Transistor (FET) known for its efficiency in power management applications. Characterized by its high-speed switching, low on-resistance, and ability to handle moderate power levels, this MOSFET is commonly used in load switch circuits, power management modules, and other applications requiring efficient control of power flow. Functionality of SI2309CDS-T1-GE3

    The SI2309CDS-T1-GE3 functions as a switch, controlling the flow of electrical power in a circuit. Its P-Channel configuration means it's most efficient when used for switching the negative side of a load to ground, which is a common requirement in many power management applications.

    Typical Application Scenarios

    Power Management in Portable Devices: The SI2309CDS-T1-GE3 is used in smartphones, tablets, and other portable devices to manage power distribution efficiently, optimizing battery life and device performance.

    Parameter Traits

    Key characteristics of the SI2309CDS-T1-GE3 include:

    - Drain-Source Voltage (Vds): The maximum voltage the MOSFET can handle across the drain and source terminals.

    - Continuous Drain Current (Id): The maximum current the MOSFET can conduct continuously.

    - RDS(on): Represents the on-resistance of the MOSFET, a critical parameter for determining power loss during operation.

    - Gate Threshold Voltage (Vgs th): The minimum gate-source voltage required to turn the MOSFET on.

    Circuit Integration: Load Switch in a Portable Device

    Illustrating the integration of the SI2309CDS-T1-GE3 in a portable device for load switching:

    1. Power Supply Connection:

    - Attach the load to the power supply's positive connector.

    - Attach the opposite end of the load to the SI2309CDS-T1-GE3's drain (D).

    2. Ground Connection:

    - Attach the SI2309CDS-T1-GE3's source (S) to the system ground.

    3. Control Signal Interface:

    - Connect the SI2309CDS-T1-GE3's gate (G) to a control signal (from a microcontroller, for example). The MOSFET is activated and current can pass through the load when there is a negative voltage in relation to the source.

    4. Pull-up/Pull-down Resistor:

    - Connect a pull-down resistor to the gate to ensure the MOSFET remains off when there is no control signal.

    5. Decoupling Capacitor (Optional):

    - Place a decoupling capacitor near the load to stabilize the voltage across the load and filter out noise.

    Design Considerations

    When designing a circuit with the SI2309CDS-T1-GE3, consider the following:

    - Gate Voltage: Ensure the gate control voltage is within the specified range and correctly polarized to control the MOSFET as desired.

    - Power Dissipation: Take into account the power dissipation of the MOSFET and ensure it's within the safe operating area, especially in high-current applications.

    - Thermal Management: Consider the thermal aspects of the MOSFET, especially if the circuit is expected to handle high power or operate in a high-temperature environment.

    - Load Characteristics: Understand the characteristics of the load, especially inductive loads, and implement appropriate protection mechanisms if needed (e.g., flyback diodes).

    To sum up, the SI2309CDS-T1-GE3 is an adaptable P-Channel MOSFET that may be used in a variety of power management scenarios. Proper integration, considering the best design practices, can significantly enhance the performance and reliability of systems where efficient power control is crucial.

    SI2309CDS-T1-GE3 FAQ

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    3. Are the SI2309CDS-T1-GE3 price and inventory displayed accurate?

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    6. What is the process for return or replacement of SI2309CDS-T1-GE3?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI2309CDS-T1-GE3 we delivered, we will accept the replacement or return of the SI2309CDS-T1-GE3 only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of SI2309CDS-T1-GE3.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

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