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Name: SI2308BDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2308BDS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI2308BDS-T1-GE3

Part No.:: SI2308BDS-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: SOT-23-3 (TO-236)

Datasheet:: SI2308BDS-T1-GE3.pdf

Description:: MOSFET N-CH 60V 2.3A SOT23-3

In Stock:: 3749

Quantity:: Add To Cart

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SI2308BDS-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
2.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
156mOhm @ 1.9A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
6.8 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
190 pF @ 30 V
FETFeature:
-
PowerDissipation(Max):
1.09W (Ta), 1.66W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI2308BDS-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2308BDS-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2308BDS-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI2308BDS-T1-GE3 information

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SI2308BDS-T1-GE3 Typical application Circuitry

SI2308BDS-T1-GE3

SI2308BDS-T1-GE3 is a N-Channel MOSFET, widely used in electronic circuits for its efficiency in switching and amplifying electronic signals.

Application Scenarios

SI2308BDS-T1-GE3 is suitable for various scenarios, such as:

- Load switching in power management systems

- High-speed switching in digital circuits

- Amplification in audio systems

- Motor control in automotive applications

Parameter Features

Key features of the SI2308BDS-T1-GE3 include:

- N-Channel MOSFET

- High-speed switching capability

- Low on-resistance

- High thermal stability

Specific Application Scenario and Circuit Connection

Let's use "Load switching in power management systems" as the application scenario for the purposes of this exposition. Here's a detailed description of the circuit connection for SI2308BDS-T1-GE3:

Load Switching

Function Overview: SI2308BDS-T1-GE3 efficiently switches loads in power management systems.

1. Source Pin Connection: Ground the SI2308BDS-T1-GE3's source pin.

2. Attach Drain Pin to Load: Fasten the Drain pin to the load that requires regulation.

3. Connecting the Gate pin to a control signal activates the gate pin. The voltage at this pin controls the on/off state of the MOSFET.

Overcurrent Protection

Function Overview: Implementing overcurrent protection using SI2308BDS-T1-GE3.

1. Sense Resistor: Place a current sense resistor between the load and the Drain pin.

2. Monitoring Circuit: Connect the sensing points across the resistor to a monitoring circuit.

3. Gate Control: Use the monitoring circuit to control the Gate pin, turning off the MOSFET when excessive current is detected.

Circuit Design Considerations

When designing circuits with SI2308BDS-T1-GE3, consider the following:

1. Gate Threshold Voltage: The voltage at which the MOSFET turns on or off.

2. Power Dissipation: Ensuring that the MOSFET can handle the power levels without overheating.

3. Switching Speed: Matching the MOSFET's switching speed with the application requirements.

4. Load Characteristics: Understanding the nature of the load (inductive, resistive, capacitive) to ensure proper operation.

In conclusion, the SI2308BDS-T1-GE3, as an N-Channel MOSFET, is highly versatile and suitable for various applications, especially in power management systems. Its efficient performance hinges on careful consideration of its electrical characteristics and the specific requirements of the application.

SI2308BDS-T1-GE3 FAQ

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6. What is the process for return or replacement of SI2308BDS-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI2308BDS-T1-GE3 we delivered, we will accept the replacement or return of the SI2308BDS-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI2308BDS-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations