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Name: SI2307BDS-T1-E3
Brand: Vishay Siliconix
SKU: SI2307BDS-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI2307BDS-T1-E3

Part No.:: SI2307BDS-T1-E3

Manufacturer:: Vishay Siliconix

Package:: SOT-23-3 (TO-236)

Datasheet:: SI2307BDS-T1-E3.pdf

Description:: MOSFET P-CH 30V 2.5A SOT23-3

In Stock:: 3559

Quantity:: Add To Cart

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SI2307BDS-T1-E3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
2.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
78mOhm @ 3.2A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
15 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
380 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
750mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI2307BDS-T1-E3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2307BDS-T1-E3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2307BDS-T1-E3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI2307BDS-T1-E3 information

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SI2307BDS-T1-E3 Typical application Circuitry

SI2307BDS-T1-E3

The SI2307BDS-T1-E3 chip is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is commonly used for switching in a range of electronic circuits. This chip is part of Vishay's portfolio and is known for its low on-resistance and high switching efficiency. Below, I will provide a detailed circuit design for an application involving the SI2307BDS-T1-E3 chip.

Application Scenario: High-Side Load Switch

In this application, we will use the SI2307BDS-T1-E3 as a high-side load switch to control the power supply to a load, such as an LED or a small motor. The load will be connected to a voltage source, and the MOSFET will act as a switch to control the flow of current.

Circuit Design:

1. Components Needed:

- SI2307BDS-T1-E3 MOSFET

- Load (e.g., LED)

- Voltage source (e.g., 5V)

- Pull-down resistor (e.g., 10kΩ)

- Gate resistor (e.g., 1kΩ)

- Capacitor (e.g., 10μF, optional for noise filtering)

2. Circuit Connection:

- Connect the Drain (D) pin of SI2307BDS-T1-E3 to the positive terminal of your load (e.g., LED).

- Connect the Source (S) pin of SI2307BDS-T1-E3 to the positive terminal of the voltage source.

- Connect the negative terminal of the load to the ground of the voltage source.

- Connect a pull-down resistor (10kΩ) between the Gate (G) pin of SI2307BDS-T1-E3 and the ground.

- Connect a gate resistor (1kΩ) between the Gate (G) pin of SI2307BDS-T1-E3 and the control signal source (e.g., microcontroller or GPIO).

- Optionally, connect a capacitor (10μF) between the Drain (D) and Source (S) pins of SI2307BDS-T1-E3 for noise filtering.

3. Considerations:

- Voltage Rating: Ensure that the voltage rating of the MOSFET (VDS) is higher than the voltage of your load.

- Current Rating: Check the MOSFET's maximum current rating (ID) to ensure it can handle the load current.

- Gate Voltage: Provide an appropriate gate voltage (VGS) to turn the MOSFET fully on (typically around 5V for SI2307BDS-T1-E3).

- Gate Resistor: Use a gate resistor to limit the current when charging/discharging the gate capacitance.

- Pull-Down Resistor: Prevent the MOSFET from turning on unintentionally by using a pull-down resistor.

- Noise Filtering: Use a capacitor to reduce noise if needed.

In summary, the SI2307BDS-T1-E3 is used as a high-side load switch to control power to a load. The key parameters to consider are voltage rating, current rating, and gate voltage. By connecting the components as described above and considering these parameters, you can effectively control power to your load using this MOSFET.

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6. What is the process for return or replacement of SI2307BDS-T1-E3?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI2307BDS-T1-E3.

(3)The PartNo is unused and only in the original unpacked packaging.

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