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Name: SI2305CDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2305CDS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI2305CDS-T1-GE3

Part No.:: SI2305CDS-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: SOT-23-3 (TO-236)

Datasheet:: SI2305CDS-T1-GE3.pdf

Description:: MOSFET P-CH 8V 5.8A SOT23-3

In Stock:: 3046

Quantity:: Add To Cart

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SI2305CDS-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
8 V
Current-ContinuousDrain(Id)@25°C:
5.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
1.8V, 4.5V
RdsOn(Max)@IdVgs:
35mOhm @ 4.4A, 4.5V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
30 nC @ 8 V
Vgs(Max):
±8V
InputCapacitance(Ciss)(Max)@Vds:
960 pF @ 4 V
FETFeature:
-
PowerDissipation(Max):
960mW (Ta), 1.7W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI2305CDS-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI2305CDS-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI2305CDS-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI2305CDS-T1-GE3 information

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SI2305CDS-T1-GE3 Typical application Circuitry

SI2305CDS-T1-GE3

The SI2305CDS-T1-GE3 is a P-Channel MOSFET, typically used in power management applications. This type of MOSFET is favored for its efficiency in handling power and its compact size, making it suitable for portable and space-constrained applications.

Applications of SI2305CDS-T1-GE3:

1. Power Management in Portable Devices: This MOSFET is commonly used in smartphones, tablets, and other portable electronics for power management tasks. It helps in efficient distribution and regulation of power within these devices.

2. Load Switching: The SI2305CDS-T1-GE3 is also suitable for load switching applications. It can efficiently control the on/off state of different components in a circuit, thereby managing power consumption.

Key Parameters and Features:

- Low On-Resistance: This characteristic is crucial for reducing power loss and increasing efficiency in circuits.

- High Power and Current Handling: Suitable for applications requiring significant power control.

- Compact Size: This attribute makes it ideal for applications like mobile devices, where there is a shortage of space.

- Fast Switching Speed: Beneficial for applications where rapid switching is necessary.

Circuit Design Using SI2305CDS-T1-GE3:

Example Application: Power Switching Circuit for a Portable Device

- Pin Configuration: Identify the Gate (G), Drain (D), and Source (S) pins of the SI2305CDS-T1-GE3.

- Gate Driving: Connect the Gate to a microcontroller pin for control. Use a resistor (e.g., 10kΩ) between the microcontroller and the Gate to limit current.

- Source and Drain Connection: Connect the Source to the negative side of the power supply and the Drain to the load (e.g., a motor or LED).

- Pull-down Resistor on Gate: Include a pull-down resistor (e.g., 10kΩ) on the Gate to ensure the MOSFET turns off when the microcontroller pin is in a high-impedance state.

Things to Think About When Designing Circuits:

1. Thermal Management: To prevent overheating, make sure that adequate heat is dissipated.

2. Voltage and Current Ratings: Match the MOSFET's ratings with the circuit requirements.

3. Protection: To guard against reverse polarity and voltage spikes, add components like diodes.

4. Control Logic: Ensure the microcontroller logic correctly interfaces with the MOSFET for efficient switching.

In summary, the SI2305CDS-T1-GE3 is a versatile and efficient P-Channel MOSFET suitable for various applications, particularly in power management and load switching. Its low on-resistance and fast switching capabilities make it ideal for both high-performance and portable applications. When designing circuits with this MOSFET, considerations like thermal management, voltage and current ratings, protective elements, and proper control logic are crucial for optimal performance.

SI2305CDS-T1-GE3 FAQ

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6. What is the process for return or replacement of SI2305CDS-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI2305CDS-T1-GE3 we delivered, we will accept the replacement or return of the SI2305CDS-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI2305CDS-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations