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Name: PSMN4R8-100BSEJ
Brand: Nexperia USA Inc.
SKU: PSMN4R8-100BSEJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Nexperia USA Inc. PSMN4R8-100BSEJ

Part No.:: PSMN4R8-100BSEJ

Manufacturer:: Nexperia USA Inc.

Package:: D2PAK

Datasheet:: PSMN4R8-100BSEJ.pdf

Description:: MOSFET N-CH 100V 120A D2PAK

In Stock:: 2643

Quantity:: Add To Cart

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PSMN4R8-100BSEJ Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
120A (Tj)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
4.8mOhm @ 25A, 10V
Vgs(th)(Max)@Id:
4V @ 1mA
GateCharge(Qg)(Max)@Vgs:
278 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
14400 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
405W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

PSMN4R8-100BSEJ this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including PSMN4R8-100BSEJ price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for PSMN4R8-100BSEJ to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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PSMN4R8-100BSEJ information

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PSMN4R8-100BSEJ Typical application Circuitry

PSMN4R8-100BSEJ

The PSMN4R8-100BSEJ is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Nexperia. Power MOSFETs are crucial components in the field of power electronics, playing an essential role in various types of power supply circuits, motor drives, and power management systems.

Characteristics of PSMN4R8-100BSEJ: The PSMN4R8-100BSEJ is designed to possess certain unique features that enhance its utility in a wide range of applications. With a continuous drain current of 100A and a Vds (drain-source voltage) of 100V, this power MOSFET is operational. The relatively high current rating allows the component to handle a large amount of power, making it suitable for use in heavy-duty applications. This device also showcases a low Rdson (drain-source resistance) value, which translates into high efficiency due to low conduction losses.

Application Scenarios: As a power MOSFET, the PSMN4R8-100BSEJ finds its application in multiple domains, including but not limited to, power supply units, DC-DC converters, motor control circuits, and power management units in computer servers and telecommunications equipment.

Circuit Design

Let's discuss a typical application scenario - utilizing PSMN4R8-100BSEJ in a switching power supply circuit:

1. Connecting the Drain: The drain terminal of the MOSFET (Pin 2) is connected to one end of the inductor in the circuit. This inductor is also connected to the output load.

2. Connecting the Gate: The gate terminal of the MOSFET (Pin 1) receives the PWM (Pulse Width Modulation) signal. The output voltage is controlled by this signal, which also controls how the MOSFET switches.

3. Connecting the Source: The source terminal of the MOSFET (Pin 3) is connected to the ground.

4. Using Flyback Diode: A flyback diode is connected across the inductor to protect the MOSFET from any high voltage spikes caused due to sudden changes in current.

Design Considerations

When designing a circuit using the PSMN4R8-100BSEJ, certain factors need to be kept in mind:

- Thermal Management: Power MOSFETs like this one can generate significant amounts of heat, particularly when operating at high currents. Hence, appropriate heat sinking or cooling measures should be taken.

- Gate Drive Circuit: The gate drive circuit needs to provide sufficient voltage to switch the MOSFET on and off effectively.

- Protection Mechanisms: The use of suitable protection mechanisms, such as flyback diodes and snubbers, should be considered to protect against inductive kickback or voltage spikes.

- PCB Layout: A carefully designed PCB layout can minimize stray inductance and capacitance, reducing potential issues with noise and electromagnetic interference.

In a nutshell, the PSMN4R8-100BSEJ is a potent component in power electronics, providing high performance and efficiency in a myriad of applications, provided that appropriate design considerations are taken into account.

PSMN4R8-100BSEJ FAQ

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3. Are the PSMN4R8-100BSEJ price and inventory displayed accurate?

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6. What is the process for return or replacement of PSMN4R8-100BSEJ?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the PSMN4R8-100BSEJ we delivered, we will accept the replacement or return of the PSMN4R8-100BSEJ only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of PSMN4R8-100BSEJ.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations