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Name: PSMN2R6-40YS,115
Brand: Nexperia USA Inc.
SKU: PSMN2R6-40YS,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Nexperia USA Inc. PSMN2R6-40YS,115

Part No.:: PSMN2R6-40YS,115

Manufacturer:: Nexperia USA Inc.

Package:: LFPAK56, Power-SO8

Datasheet:: PSMN2R6-40YS,115.pdf

Description:: MOSFET N-CH 40V 100A LFPAK56

In Stock:: 3903

Quantity:: Add To Cart

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PSMN2R6-40YS,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
40 V
Current-ContinuousDrain(Id)@25°C:
100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
2.8mOhm @ 25A, 10V
Vgs(th)(Max)@Id:
4V @ 1mA
GateCharge(Qg)(Max)@Vgs:
63 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
3776 pF @ 12 V
FETFeature:
-
PowerDissipation(Max):
131W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

PSMN2R6-40YS,115 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including PSMN2R6-40YS,115 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for PSMN2R6-40YS,115 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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PSMN2R6-40YS,115 information

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PSMN2R6-40YS,115 Typical application Circuitry

PSMN2R6-40YS,115

A N-channel MOSFET with excellent efficiency and high speed power switching applications is the PSMN2R6-40YS,115.It's a part of a family of MOSFETs that are commonly used in power conversion and management tasks within electronic circuits, providing a means to efficiently control the flow of power.

Characteristic Features and Specifications:

- Low On-Resistance (Rds(on)): The PSMN2R6-40YS,115 boasts a low on-resistance, enhancing its efficiency by minimizing power losses during operation.

- High Current Capability: Capable of handling high currents, making it suitable for applications requiring the switching or regulation of significant power levels.

- Voltage Rating: With a drain-source voltage (Vds) rating of 40V, it's well-suited for systems operating at moderate voltages, providing ample headroom for voltage spikes and surges.

- Enhanced Power Dissipation: Designed for enhanced power dissipation, ensuring reliability even under high load conditions.

- Fast Switching Speed: The fast switching capability makes it ideal for high-frequency applications, reducing transition losses and improving overall efficiency.

Application Scenario - DC-DC Converter:

A DC-DC converter is a crucial application for the PSMN2R6-40YS,115, where it can be used to efficiently convert a broad range of DC input voltages to a regulated DC output voltage, applicable in portable devices, automotive applications, and power supply modules.

- Switch Configuration: Utilize the PSMN2R6-40YS,115 as the main switching element in a buck converter circuit. Attach the MOSFET's Drain (D) to the input voltage supply. The Source (S) pin is connected to ground through the converter's inductor and output filter.

- Gate Drive Circuitry: Implement a gate driver to control the MOSFET's Gate (G) pin. The driver must provide sufficient voltage and current to switch the MOSFET efficiently, minimizing transition times and hence losses. A gate resistor may be added between the driver and the Gate pin to control the switching speed and dampen oscillations.

- Feedback and Regulation: Incorporate a feedback mechanism using a voltage divider connected from the output to an error amplifier or a microcontroller ADC input. With this configuration, the output voltage is guaranteed to stay constant despite changes in the input voltage or the load.

- Protection Features: Add overcurrent protection by sensing the voltage drop across a current sense resistor placed in series with the Source pin. Use this information to control or shutdown the MOSFET via the gate drive circuitry if the current exceeds safe limits.

Design Considerations:

- Thermal Management: Given the power dissipation characteristics of the PSMN2R6-40YS,115, ensure adequate thermal management, possibly through the use of heat sinks or forced air cooling, especially in high-power applications.

- Gate Drive Voltage: To fully improve the MOSFET without going beyond its maximum gate-source voltage (Vgs) rating and preventing damage, make sure the gate drive voltage is within the designated range.

- Layout Points to Remember: Take note of the PCB layout, particularly when using it in high-frequency applications. Minimize the loop area to reduce inductive losses and EMI. Place decoupling capacitors close to the MOSFET to stabilize the supply voltage.

- Parasitic Inductances and Capacitances: Be mindful of parasitic elements inherent in the circuit, as they can affect switching performance and efficiency. Appropriate component placement and arrangement can lessen these impacts.

In designing circuits with the PSMN2R6-40YS,115, its features like low on-resistance, high current handling, fast switching capabilities, and voltage rating make it an optimal choice for efficient power conversion in DC-DC converters. Careful consideration of thermal management, gate drive requirements, PCB layout, and protection schemes are essential to leverage the MOSFET's capabilities fully, ensuring reliable and efficient operation.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of PSMN2R6-40YS,115.

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