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Name: PSMN0R9-25YLC,115
Brand: Nexperia USA Inc.
SKU: PSMN0R9-25YLC,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Nexperia USA Inc. PSMN0R9-25YLC,115

Part No.:: PSMN0R9-25YLC,115

Manufacturer:: Nexperia USA Inc.

Package:: LFPAK56, Power-SO8

Datasheet:: PSMN0R9-25YLC,115.pdf

Description:: MOSFET N-CH 25V 100A LFPAK56

In Stock:: 3513

Quantity:: Add To Cart

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PSMN0R9-25YLC,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
25 V
Current-ContinuousDrain(Id)@25°C:
100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
0.99mOhm @ 25A, 10V
Vgs(th)(Max)@Id:
1.95V @ 1mA
GateCharge(Qg)(Max)@Vgs:
110 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
6775 pF @ 12 V
FETFeature:
-
PowerDissipation(Max):
272W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

PSMN0R9-25YLC,115 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including PSMN0R9-25YLC,115 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for PSMN0R9-25YLC,115 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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PSMN0R9-25YLC,115 information

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PSMN0R9-25YLC,115 Typical application Circuitry

The PSMN0R9-25YLC,115 is a prominent MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from the NXP Semiconductors' PSMN series. This series is particularly recognized for its high-performance and energy-efficient MOSFETs, which are widely used in power management and switching applications. The PSMN0R9-25YLC,115, with its low on-state resistance and high current handling capability, is ideal for high-efficiency power conversion in computing, automotive, and industrial systems.

1. Connection Approach and Electrical Characteristics: The PSMN0R9-25YLC,115 is a three-terminal device, with the standard MOSFET configuration of gate (G), drain (D), and source (S) terminals. It operates with a drain-source voltage (V_DS) of up to 25V and has a very low on-state resistance. When integrating this MOSFET into a circuit, it is crucial to connect the gate terminal to the control voltage, the drain terminal to the higher potential side of the load, and the source terminal to the lower potential side.

2. Pin Configuration and Circuit Integration: The PSMN0R9-25YLC,115's gate pin is used to control the device, the drain pin is connected to the load, and the source pin is typically connected to the ground or the lower potential side of the circuit. The gate pin needs to be driven properly to switch the MOSFET on and off, and it's important to ensure that the gate-source voltage (V_GS) does not exceed the maximum specified limit to prevent damage.

3. Role in Power Switching Applications: In typical applications, the PSMN0R9-25YLC,115 is utilized as a switch in power conversion and management systems. Its low on-resistance and high current capacity make it highly effective for efficiently controlling power flow in various electronic devices.

4. Performance Attributes and Suitability: The PSMN0R9-25YLC,115 is known for its low power dissipation, high switching speed, and robustness, making it suitable for demanding environments where efficient power handling and thermal management are essential.

5. Circuit Design and PCB Layout Considerations: Designing a circuit for the PSMN0R9-25YLC,115 requires careful consideration of the current handling and thermal dissipation. The PCB layout should ensure adequate heat sinking for the MOSFET and minimize the resistance and inductance in the connections, especially at the gate terminal, to achieve fast switching times.

6. Compliance with Electronic Standards: The PSMN0R9-25YLC,115 meets stringent industry standards for MOSFETs, confirming its reliability and performance in power management applications.

7. Installation and Handling Procedures: As with all semiconductor devices, handling the PSMN0R9-25YLC,115 requires caution to prevent damage from electrostatic discharge (ESD). Proper soldering techniques and ESD precautions are important during installation.

In conclusion, the PSMN0R9-25YLC,115 from the PSMN series is a high-performance MOSFET, well-suited for power management and switching applications. Its effective implementation involves accurate connections for its terminals, precise gate control, utilization in power switching systems, leveraging its high efficiency and fast switching, thoughtful circuit design for thermal management, adherence to standards, and careful handling and installation. These practices ensure the PSMN0R9-25YLC,115 operates effectively in its intended applications.

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6. What is the process for return or replacement of PSMN0R9-25YLC,115?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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