NVMFS5C670NLWFAFT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NVMFS5C670NLWFAFT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NVMFS5C670NLWFAFT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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Application Scenarios: The NVMFS5C670NLWFAFT1G is designed for various high-performance applications including DC/DC converters, load switching, and motor control systems.
Key Parameters: This MOSFET features a drain-to-source voltage (Vds) of 60V and a continuous drain current (Id) of 76A. It is housed in a compact 5x6 mm package and offers low on-state resistance (Rds(on)) of just 4.7mΩ. The device also offers excellent thermal characteristics and high avalanche and dv/dt ruggedness.
For an application scenario, let's look at a simple load-switching circuit using the NVMFS5C670NLWFAFT1G:
1. Drain Connection: The Drain (D, pin 4 of the QFN package) should be connected to one terminal of the load, with the other terminal connected to the supply voltage.
2. Gate Connection: The Gate (G, pin 1 of the QFN package) is connected to a switch control circuit. A straightforward manual switch or a more sophisticated automated switch control system could be used here.
When a voltage is applied to the Gate, it turns the MOSFET ON, allowing current to flow from the Drain to the Source.
3. Source Connection: The Source (S, pins 2 and 3 of the QFN package) is connected to the system ground. This creates the current's return path.
When designing circuits using the NVMFS5C670NLWFAFT1G, you should consider:
- Thermal Management: The MOSFET can generate significant heat during operation, particularly in high-current applications. Adequate heat dissipation should be ensured.
- Gate Voltage: The voltage applied to the Gate must not exceed the maximum gate-to-source voltage (Vgs) specified by the manufacturer.
- Protection Measures: Additional circuit elements such as pull-down resistors or freewheeling diodes may be necessary to prevent damage to the MOSFET from voltage transients or static electricity.
In summary, the NVMFS5C670NLWFAFT1G is a robust power MOSFET with excellent thermal characteristics and a small footprint. Proper design considerations including thermal management, gate voltage regulation, and protection measures are vital to achieve optimal performance in the intended application.
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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of NVMFS5C670NLWFAFT1G.
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