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Name: NVMFS5826NLWFT1G
Brand: ON Semiconductor
SKU: NVMFS5826NLWFT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor NVMFS5826NLWFT1G

Part No.:: NVMFS5826NLWFT1G

Manufacturer:: ON Semiconductor

Package:: 5-DFN (5x6) (8-SOFL)

Datasheet:: NVMFS5826NLWFT1G.pdf

Description:: MOSFET N-CH 60V 8A 5DFN

In Stock:: 2120

Quantity:: Add To Cart

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NVMFS5826NLWFT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
8A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
24mOhm @ 10A, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
17 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
850 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
3.6W (Ta), 39W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

NVMFS5826NLWFT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NVMFS5826NLWFT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NVMFS5826NLWFT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NVMFS5826NLWFT1G information

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NVMFS5826NLWFT1G Typical application Circuitry

NVMFS5826NLWFT1G

An N-channel power MOSFET with a reputation for efficiency in power conversion and management applications is the NVMFS5826NLWFT1G. This type of MOSFET is engineered to handle high currents and voltages with low on-resistance, ensuring minimal power loss during operation.

Application Scenarios

One notable application for the NVMFS5826NLWFT1G is in automotive power systems, such as those used for electric power steering (EPS). In such systems, the MOSFET can be utilized to control the motor that adjusts the steering based on the driver's input, requiring both high efficiency and reliability due to the critical nature of the application.

Parameters and Features

Key features of the NVMFS5826NLWFT1G include:

- Low on-resistance (R_DS(on)), which significantly reduces conduction losses, enhancing overall power efficiency.

- Its high current handling capacity makes it ideal for applications requiring a significant amount of power.

- Quick switching times, lower transition losses, and enhanced high-frequency application performance.

- Sturdy thermal performance that guarantees dependable operation in a variety of temperatures and operational circumstances.

- Space-constrained applications can more easily include this MOSFET because to its compact package design.

Detailed Electric Power Steering System Circuit Connection

1. Motor Connection: Connect the drain of the NVMFS5826NLWFT1G to one terminal of the EPS motor. This setup allows the MOSFET to directly control the motor's power supply, adjusting the steering assistance as required.

2. Power Source Connection: Attach the source of the NVMFS5826NLWFT1G to the vehicle's ground. This connection completes the circuit required for motor operation by giving the current a path back.

3. Control Signal Integration: Link the gate of the NVMFS5826NLWFT1G to the output of the EPS control unit. The control unit modulates this signal, typically through PWM (Pulse Width Modulation), to control the MOSFET's operation, adjusting the amount of power delivered to the motor and, consequently, the level of steering assistance.

4. Heat Management: Implement adequate heat dissipation measures for the NVMFS5826NLWFT1G, such as using a heatsink or thermal interface materials. Maintaining consistent performance across a range of load circumstances and avoiding overheating depend heavily on effective thermal management.

5. Protection Features: Incorporate protection circuits, such as over-current, over-voltage, and thermal shutdown, to safeguard the MOSFET, the motor, and the control electronics from potential damage caused by abnormal operating conditions.

Design Considerations

- Efficiency Optimization: Maximize the circuit's efficiency by taking full advantage of the low on-resistance and high current capability of the NVMFS5826NLWFT1G, minimizing energy losses and heat generation.

- Gate Drive Design: Ensure the gate driver provides sufficient voltage and current to fully turn the MOSFET on and off efficiently, optimizing the system's response time and reducing switching losses.

- EMI Mitigation: Given the high switching speeds, design the circuit to minimize electromagnetic interference, using appropriate filtering and layout practices to avoid disrupting other vehicle systems.

- Reliability under Stress: Consider the automotive environment's demanding conditions, including temperature fluctuations and vibrations, in the design to ensure the NVMFS5826NLWFT1G's reliability and longevity in the EPS system.

Incorporating the NVMFS5826NLWFT1G into an electric power steering system or similar applications requires careful consideration of efficiency, thermal management, and reliability. The MOSFET's characteristics make it an excellent choice for developing compact, high-performance power conversion and management solutions in automotive and other demanding environments.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NVMFS5826NLWFT1G.

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