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Name: NVMFS5113PLT1G
Brand: ON Semiconductor
SKU: NVMFS5113PLT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NVMFS5113PLT1G

Part No.:: NVMFS5113PLT1G

Manufacturer:: ON Semiconductor

Package:: 5-DFN (5x6) (8-SOFL)

Datasheet:: NVMFS5113PLT1G.pdf

Description:: MOSFET P-CH 60V 10A/64A 5DFN

In Stock:: 2189

Quantity:: Add To Cart

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NVMFS5113PLT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
10A (Ta), 64A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
14mOhm @ 17A, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
83 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
4400 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
3.8W (Ta), 150W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

NVMFS5113PLT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NVMFS5113PLT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NVMFS5113PLT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NVMFS5113PLT1G information

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NVMFS5113PLT1G Typical application Circuitry

NVMFS5113PLT1G

Developed by ON Semiconductor, the NVMFS5113PLT1G is a single N-channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) offering an excellent blend of fast switching, low thermal resistance, and low gate charge, making it a go-to choice for a variety of high-efficiency applications.

1. Voltage Rating: The NVMFS5113PLT1G is rated to handle a drain-source voltage (Vds) of 30V, making it suitable for a variety of low to medium-voltage applications.

2. Current Capacity: This Power MOSFET can handle a continuous drain current (ID) of 27A at 25 °C. This high current capability enables it to power a variety of high-demand loads effectively.

3. Low On-Resistance: With an on-resistance (RDS(on)) of just 2.7mΩ at a gate-source voltage of 10V, NVMFS5113PLT1G demonstrates high efficiency by minimizing energy loss due to resistance.

4. Switching Speed: Owing to its fast switching speed, the NVMFS5113PLT1G ensures efficient operation in applications that require rapid switching, such as SMPS (Switch Mode Power Supplies) and DC/DC converters.

5. Package Design: The NVMFS5113PLT1G is encapsulated in a compact and thermally enhanced PowerFLAT™ 5x6 package, promoting superior thermal management and allowing for a smaller PCB footprint.

6. Thermal Resistance: The MOSFET boasts a low thermal resistance, ensuring efficient heat dissipation even when dealing with high currents or high-frequency operations.

7. ESD Protection: This Power MOSFET features inherent ESD Electrostatic Discharge) protection, which increases the robustness of the overall application circuit.

8. Power Efficiency: Due to its low gate charge (QG), the NVMFS5113PLT1G offers high power efficiency, an important trait for battery-powered applications.

9. Safety Features: This Power MOSFET has built-in thermal shutdown features and overcurrent protection, ensuring the device's longevity and reliability.

10. Application Versatility: The NVMFS5113PLT1G is designed for use in a wide array of applications, including computing power management, motor controls, power supplies, and telecom equipment, among others.

In a nutshell, the NVMFS5113PLT1G is an efficient, reliable, and versatile power component, offering a blend of robust performance, protection features, and design flexibility, making it a suitable choice for a wide range of power-demanding applications.

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6. What is the process for return or replacement of NVMFS5113PLT1G?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NVMFS5113PLT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations