What is the Additional Feature ?

Name: NVGS5120PT1G
Brand: ON Semiconductor
SKU: NVGS5120PT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NVGS5120PT1G

Part No.:: NVGS5120PT1G

Manufacturer:: ON Semiconductor

Package:: 6-TSOP

Datasheet:: NVGS5120PT1G.pdf

Description:: MOSFET P-CH 60V 1.8A 6TSOP

In Stock:: 113800

Quantity:: Add To Cart

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NVGS5120PT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
1.8A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
111mOhm @ 2.9A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
18.1 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
942 pF @ 30 V
FETFeature:
-
PowerDissipation(Max):
600mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

NVGS5120PT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NVGS5120PT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NVGS5120PT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NVGS5120PT1G information

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NVGS5120PT1G Typical application Circuitry

NVGS5120PT1G

The MOSFET NVGS5120PT1G is a widely employed semiconductor component for both signal amplification and electronic signal switching applications.Because of its great efficiency and quick response times, MOSFETs are essential in many different applications.

Application Scenarios

Motor Control Circuits: The NVGS5120PT1G is well-suited for use in motor control circuits, where it can be used to regulate the speed and direction of a DC motor, a common requirement in robotics, automotive applications, and industrial machinery.

Parameter Features

- High Drain-Source Voltage: The NVGS5120PT1G can likely withstand high voltages across its drain-source terminals, making it suitable for high-voltage applications.

- Low On-Resistance: This MOSFET probably features low on-resistance, which reduces power dissipation when the device is conducting.

- High Current Capability: It is capable of handling high currents, which is essential for applications like motor control where large amounts of power may be required.

Circuit Design Considerations

Designing with the NVGS5120PT1G involves ensuring proper gate drive voltage, dealing with heat dissipation due to power losses, and implementing protection mechanisms against overcurrent and voltage spikes.

Detailed Circuit Connection Example: DC Motor Control

In a DC motor control circuit, the NVGS5120PT1G can be used as a switch to control the motor's speed and direction.

- Gate Drive Connection: The gate of the NVGS5120PT1G should be connected to a PWM output from a microcontroller or motor driver IC. This connection controls the switching of the MOSFET and, consequently, the motor speed by adjusting the duty cycle of the PWM signal.

- Motor Connection: Join one terminal of the DC motor to the drain of the NVGS5120PT1G. Connect the opposite terminal of the motor to the positive voltage supplied by the power source.

- Source and Ground Connection: The source pin of the NVGS5120PT1G should be connected to the ground. This setup completes the circuit for current flow when the MOSFET is turned on.

- Flyback Diode: Place a flyback diode across the motor terminals to protect the NVGS5120PT1G from voltage spikes generated by the inductive load when the MOSFET is turned off.

When designing this circuit, it is critical to ensure that the PWM signal voltage is sufficient to fully turn on the NVGS5120PT1G. Additionally, the circuit must include adequate heat sinking for the MOSFET, especially if the motor operates at high currents. The flyback diode is essential for protecting the MOSFET against inductive kickback from the motor.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NVGS5120PT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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