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Name: NVD3055-150T4G-VF01
Brand: ON Semiconductor
SKU: NVD3055-150T4G-VF01
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor NVD3055-150T4G-VF01

Part No.:: NVD3055-150T4G-VF01

Manufacturer:: ON Semiconductor

Package:: DPAK

Datasheet:: NVD3055-150T4G-VF01.pdf

Description:: MOSFET N-CH 60V 9A DPAK

In Stock:: 2232

Quantity:: Add To Cart

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NVD3055-150T4G-VF01 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
9A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
150mOhm @ 4.5A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
15 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
280 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
1.5W (Ta), 28.8W (Tj)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

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NVD3055-150T4G-VF01 information

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NVD3055-150T4G-VF01 Typical application Circuitry

NVD3055-150T4G-VF01

A MOSFET, a kind of transistor utilized for switching and amplification of electrical signals in a variety of applications, is the NVD3055-150T4G-VF01. This particular component has low on-resistance, high switching speed, and substantial power handling capacity. It is made for effective power management and control in circuits.

Use Cases

The NVD3055-150T4G-VF01 MOSFET finds widespread use in power supply units (PSUs) because to its critical function in efficiently converting and controlling electricity. Its characteristics make it well-suited for switching regulators, DC-DC converters, and power management modules in consumer electronics, automotive systems, and industrial machinery.

Parameters and Features

The NVD3055-150T4G-VF01 boasts several key features:

- Low on-resistance, minimizing power loss during operation.

- High current handling capability, suitable for applications requiring high power.

- Fast switching speed, enhancing the efficiency of power conversion circuits.

- Thermal stability, ensuring reliability across a wide temperature range.

- TO-220 package, facilitating easy integration into a variety of circuit designs.

Detailed Circuit Connection for a Power Supply Unit

1. Input Voltage Connection: To integrate the NVD3055-150T4G-VF01 into a PSU, first connect the drain (D) pin to the positive terminal of the input voltage source. This setup is crucial for the MOSFET to regulate the incoming power effectively.

2. Ground Connection: Attach the source (S) pin of the NVD3055-150T4G-VF01 to the ground of the circuit. This connection is vital for establishing a reference point for the voltage and ensuring the proper operation of the MOSFET.

3. Gate Voltage Control: Connect the gate (G) pin to a PWM (Pulse Width Modulation) signal generator. This connection is essential for controlling the switching operation of the NVD3055-150T4G-VF01, allowing precise regulation of the output voltage by adjusting the duty cycle of the PWM signal.

4. Output Load Connection: The output from the drain (D) pin, after regulation, should be connected to the load. This could be any component or module that the PSU is intended to power, such as a microcontroller or another electronic device.

5. Feedback Loop for Voltage Regulation: Implement a feedback mechanism using a voltage divider and an operational amplifier connected to the gate control circuit. This setup monitors the output voltage and adjusts the gate signal as needed to maintain a stable output, highlighting the NVD3055-150T4G-VF01's role in dynamic voltage regulation.

Design Considerations

- Thermal Management: Given the NVD3055-150T4G-VF01's power handling capabilities, heat dissipation is a critical design consideration. Implementing adequate cooling measures, such as heatsinks or forced air cooling, can prevent thermal overload and ensure reliable operation.

- Gate Drive Circuitry: Create a gate drive circuit that can supply enough voltage and current to completely turn on and off the NVD3055-150T4G-VF01. This involves selecting appropriate resistors and capacitors to shape the gate signal for optimal performance.

- Protection Features: Incorporate protection mechanisms such as current limiting and thermal shutdown to safeguard the NVD3055-150T4G-VF01 and the overall circuit from potential damage due to overcurrent or excessive temperature conditions.

- PCB Layout: Careful attention to the PCB layout, including trace widths and separation, can minimize parasitic inductances and capacitances, ensuring the NVD3055-150T4G-VF01 operates at its best performance.

Incorporating the NVD3055-150T4G-VF01 into a power supply unit requires a thoughtful approach to circuit design, focusing on efficient power conversion, thermal management, and reliability. With its low on-resistance, high current capability, and fast switching speed, the NVD3055-150T4G-VF01 is an excellent choice for designing high-performance power supplies and other power management applications.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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