What is the Additional Feature ?

Name: NTS4001NT1G
Brand: ON Semiconductor
SKU: NTS4001NT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTS4001NT1G

Part No.:: NTS4001NT1G

Manufacturer:: ON Semiconductor

Package:: SC-70-3 (SOT323)

Datasheet:: NTS4001NT1G.pdf

Description:: MOSFET N-CH 30V 270MA SC70-3

In Stock:: 3435

Quantity:: Add To Cart

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NTS4001NT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
270mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.5V, 4V
RdsOn(Max)@IdVgs:
1.5Ohm @ 10mA, 4V
Vgs(th)(Max)@Id:
1.5V @ 100µA
GateCharge(Qg)(Max)@Vgs:
1.3 nC @ 5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
33 pF @ 5 V
FETFeature:
-
PowerDissipation(Max):
330mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

NTS4001NT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTS4001NT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTS4001NT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTS4001NT1G information

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NTS4001NT1G Typical application Circuitry

NTS4001NT1G

The NTS4001NT1G is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip designed for power switching applications. It is commonly used to control and regulate power flow in electronic devices and systems, offering high-performance characteristics suitable for various applications.

Key Parameters and Features of NTS4001NT1G:

- NTS4001NT1G is a P-channel MOSFET transistor.

- It provides low on-resistance (RDS(on)), minimizing power dissipation.

- The chip is capable of handling moderate drain current, suitable for various low to medium-power applications.

- It operates with a low gate threshold voltage (VGS(th)), enabling easy control.

- Designed to work within a wide voltage range.

Application Scenario: Battery Protection Circuit

In this scenario, we will use the NTS4001NT1G MOSFET in a battery protection circuit for a portable electronic device to prevent over-discharge of the battery.

Circuit Connection:

- Connect the Drain (D) of the NTS4001NT1G to the negative terminal of the battery.

- Connect the Source (S) of the NTS4001NT1G to the common ground (0V) of the device.

- Connect the Gate (G) of the NTS4001NT1G to the output of a battery voltage monitor circuit, which detects the battery voltage level.

- Connect a gate resistor (R1) between the battery voltage monitor circuit's output and the Gate of the MOSFET to limit the current into the gate. The value of R1 depends on the requirements of the voltage monitor circuit.

- Connect the device's load (e.g., microcontroller, sensors) to the common ground and to the battery voltage through the MOSFET. The load is only powered when the MOSFET is in the "on" state.

Considerations for Circuit Design:

1. Over-Discharge Protection: Ensure that the voltage monitor circuit detects when the battery voltage drops below a safe threshold to prevent over-discharge.

2. Voltage Compatibility: Confirm that the voltage rating of the NTS4001NT1G is compatible with the battery voltage.

3. Load Current: Choose a MOSFET (or a different P-channel MOSFET) that can handle the maximum load current of the device.

4. Gate Voltage: The battery voltage monitor circuit should provide a sufficient gate voltage to turn off the MOSFET when the battery voltage is too low.

5. Gate Resistor: Select an appropriate value for R1 to limit the current into the gate while ensuring reliable switching.

By carefully addressing these considerations and designing the circuit accordingly, you can create a battery protection circuit using the NTS4001NT1G MOSFET, ensuring that the battery is not over-discharged, which is crucial for prolonging battery life in portable electronic devices.

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6. What is the process for return or replacement of NTS4001NT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NTS4001NT1G we delivered, we will accept the replacement or return of the NTS4001NT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NTS4001NT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations