What is the Additional Feature ?

Name: NTR4503NT1G
Brand: ON Semiconductor
SKU: NTR4503NT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTR4503NT1G

Part No.:: NTR4503NT1G

Manufacturer:: ON Semiconductor

Package:: SOT-23-3 (TO-236)

Datasheet:: NTR4503NT1G.pdf

Description:: MOSFET N-CH 30V 1.5A SOT23-3

In Stock:: 2435

Quantity:: Add To Cart

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NTR4503NT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
1.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
110mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
7 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
250 pF @ 24 V
FETFeature:
-
PowerDissipation(Max):
420mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

NTR4503NT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTR4503NT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTR4503NT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTR4503NT1G information

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NTR4503NT1G Typical application Circuitry

NTR4503NT1G

NTR4503NT1G is a type of MOSFET, a widely used semiconductor device in electronic circuits for switching and amplifying signals. MOSFETs like the NTR4503NT1G are integral in power management, signal processing, and control applications due to their high efficiency and fast response characteristics.

Application Scenarios

Load Switching: The NTR4503NT1G is particularly suitable for load-switching applications, where it can control the connection and disconnection of a load to a power source, such as in battery-powered devices, power distribution systems, and smart home devices.

Parameter Features

- Low On-Resistance (Rds(on)): The NTR4503NT1G likely boasts a low Rds(on), which is crucial for minimizing power loss when the device is in the 'on' state, enhancing overall energy efficiency.

- High Drain-Source Voltage (Vds): It probably supports a high Vds, allowing it to be used in circuits with relatively high operating voltages.

- Fast Switching Speed: This MOSFET might offer fast switching capabilities, reducing transition losses and improving performance in high-frequency applications.

Circuit Design Considerations

When incorporating the NTR4503NT1G into a circuit, it's important to address thermal management due to power dissipation, ensure proper gate driving to fully activate the MOSFET, and protect against voltage spikes that could damage the device.

Detailed Circuit Connection Example: Battery Load Switching

In a battery-powered device, the NTR4503NT1G can be used to switch the connection between the battery and the device's load, enabling power management and conservation.

-The negative terminal of the battery should be linked to the source of the NTR4503NT1G.This configuration establishes the power source for the load-switching application.

- Load Connection: Connect the NTR4503NT1G's drain to the negative terminal of the load. Establish a direct connection between the positive terminal of the load and the positive terminal of the battery.

- Gate Control: The gate of the NTR4503NT1G should be connected to a control signal, typically from a microcontroller or a manual switch. By enabling or disabling the MOSFET, this control signal will regulate the amount of power supplied to the load.

- Safety and Solidity: When there is no control signal, make sure the NTR4503NT1G stays off by including a pull-down resistor at the gate. Additionally, a flyback diode may be placed across inductive loads to protect the MOSFET from voltage spikes.

Designing with the NTR4503NT1G in this application requires careful consideration of the gate control voltage to ensure the MOSFET fully turns on when desired. It's also important to manage the thermal aspects, especially if the load draws significant current, to prevent the NTR4503NT1G from overheating. Lastly, ensuring the MOSFET's maximum Vds and continuous drain current ratings are not exceeded is crucial for reliable operation.

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6. What is the process for return or replacement of NTR4503NT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NTR4503NT1G we delivered, we will accept the replacement or return of the NTR4503NT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NTR4503NT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations