What is the Additional Feature ?

Name: NTR4170NT1G
Brand: ON Semiconductor
SKU: NTR4170NT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTR4170NT1G

Part No.:: NTR4170NT1G

Manufacturer:: ON Semiconductor

Package:: SOT-23-3 (TO-236)

Datasheet:: NTR4170NT1G.pdf

Description:: MOSFET N-CH 30V SOT23-3

In Stock:: 2931

Quantity:: Add To Cart

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NTR4170NT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
2.4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.5V, 10V
RdsOn(Max)@IdVgs:
55mOhm @ 3.2A, 10V
Vgs(th)(Max)@Id:
1.4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
4.76 nC @ 4.5 V
Vgs(Max):
±12V
InputCapacitance(Ciss)(Max)@Vds:
432 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
480mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

NTR4170NT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTR4170NT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTR4170NT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTR4170NT1G information

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NTR4170NT1G Typical application Circuitry

The NTR4170NT1G is a part of the NTR series, produced by ON Semiconductor, and is a notable MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in their lineup. This MOSFET is specifically designed for high-efficiency power management applications, such as in power conversion, switching, and as a load switch in portable devices. Its low threshold voltage and high current handling capability make it particularly suitable for low-voltage and high-density applications where power efficiency is crucial.

1. Electrical Specifications and Functional Attributes: The NTR4170NT1G operates effectively in low-voltage environments, typically within a range of 20V to 30V. This feature makes it well-suited for portable electronic devices which operate at lower voltages. It's engineered to have a low on-resistance, which is beneficial for reducing power losses and improving efficiency in a circuit. The device's low threshold voltage is also a key characteristic, enabling it to turn on at lower voltages, which is essential in low-voltage applications.

2. Pin Configuration and Connection Methodology: The NTR4170NT1G has a standard three-pin MOSFET configuration, comprising the gate (G), drain (D), and source (S) terminals. The gate terminal is the control input that regulates the current flow between the drain and source terminals. The drain terminal is the main current carrying terminal, through which the current flows into the MOSFET, and the source terminal is where the current exits the MOSFET. Accurate connection of these terminals is crucial for the MOSFET's optimal operation in a circuit.

3. Circuit Integration Techniques: When incorporating the NTR4170NT1G into electronic circuits, it's critical to consider its role in power management. The MOSFET can be used as a switch in power supply circuits or for controlling the load in various applications. The placement of the MOSFET within the circuit should be done to minimize losses, considering factors like current paths and thermal management to ensure efficient operation.

4. Application Versatility and Performance: The NTR4170NT1G is renowned for its adaptability and high performance in managing power in electronic circuits. Its ability to efficiently handle high currents with minimal loss makes it suitable for a broad range of applications, including power conversion in portable devices, load switching, and power management in computing devices.

5. Design Considerations for Circuit Implementation: Designing a circuit with the NTR4170NT1G involves ensuring that the traces connected to the gate, drain, and source are capable of handling the required current and minimizing resistance. Thermal management is also a significant factor, as the MOSFET can generate heat during operation. Therefore, ensuring proper heat dissipation is crucial for maintaining the device's longevity and performance.

6. Compliance with Industry Standards: The NTR4170NT1G adheres to the stringent industry standards set for power MOSFETs, ensuring its reliability and suitability in various electronic applications.

7. Handling and Installation Procedures: Handling the NTR4170NT1G requires precautions against electrostatic discharge (ESD). It is important to follow ESD protection protocols during installation to prevent damage to the MOSFET, ensuring its integrity and performance in the circuit.

In conclusion, the NTR4170NT1G from ON Semiconductor's NTR series is an effective MOSFET for power management applications. Its efficient use involves understanding its electrical characteristics, ensuring precise pin connections, strategic circuit integration, taking advantage of its versatility in applications, careful circuit design, adherence to industry standards, and proper handling and installation. These practices ensure that the NTR4170NT1G operates effectively, contributing to the efficiency and reliability of power management in electronic devices.

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6. What is the process for return or replacement of NTR4170NT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NTR4170NT1G we delivered, we will accept the replacement or return of the NTR4170NT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NTR4170NT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations