NTR4101PT1G

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ON Semiconductor NTR4101PT1G

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Part No.:
NTR4101PT1G
Manufacturer:
ON Semiconductor
Package:
SOT-23-3 (TO-236)
Datasheet:
NTR4101PT1G.pdf
Description:
MOSFET P-CH 20V 1.8A SOT23-3
In Stock:
3683
Quantity:
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  • Purchase and inquiryPurchase and inquiry

    NTR4101PT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTR4101PT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTR4101PT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    NTR4101PT1G informationNTR4101PT1G information

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    NTR4101PT1G Typical application Circuitry

    NTR4101PT1G

    The NTR4101PT1G is a P-channel Power MOSFET, commonly utilized in power switching applications, particularly when a high-side switch is needed due to its ability to turn on with a negative gate-source voltage.

    NTR4101PT1G Application Scenario: High-Side Load Switching

    Parameter Features:

    - Low R_DS(on): Results in minimal power loss during conduction.

    - Negative Gate-Source Threshold Voltage (V_GS(th)): Suitable for high-side switching.

    - Small Footprint: Ideal for space-constrained applications.

    Example Circuit: High-Side Load Switch for LED Lighting

    1. Power Source Connection: The source terminal (pin 3) is connected to a positive voltage rail.

    2. Load Connection: Attach an LED (with a current limiting resistor) to the drain terminal (pin 2).

    3. Control Logic: The gate terminal (pin 1) is linked to a microcontroller's GPIO pin, capable of providing a logic-level voltage lower than the source voltage to turn the MOSFET on.

    4. Gate Pull-down Resistor: A resistor (e.g., 10kΩ) is connected between the gate and the source terminal to ensure the MOSFET turns off when the gate is not actively driven.

    Circuit Design Considerations NTR4101PT1G:

    1. Gate Drive Voltage: Ensure the microcontroller can provide a sufficient voltage differential between the gate and source to fully turn on the MOSFET.

    2. LED Current: Select a current-limiting resistor based on the LED's specifications and the voltage across it when the MOSFET is on.

    3. Thermal Management: Depending on the load current, the MOSFET may require a heat sink to maintain a safe operating temperature.

    Incorporating the NTR4101PT1G in a circuit mandates a careful analysis of the application's voltage levels, current requirements, and thermal conditions to ensure the MOSFET operates within its specified limits and the circuit functions as intended. Always consult the datasheet for in-depth electrical characteristics to guide the integration process.

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    6. What is the process for return or replacement of NTR4101PT1G?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NTR4101PT1G we delivered, we will accept the replacement or return of the NTR4101PT1G only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of NTR4101PT1G.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

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