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Name: NTMFS6H800NT1G
Brand: ON Semiconductor
SKU: NTMFS6H800NT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor NTMFS6H800NT1G

Part No.:: NTMFS6H800NT1G

Manufacturer:: ON Semiconductor

Package:: 5-DFN (5x6) (8-SOFL)

Datasheet:: NTMFS6H800NT1G.pdf

Description:: MOSFET N-CH 80V 28A/203A 5DFN

In Stock:: 3647

Quantity:: Add To Cart

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NTMFS6H800NT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
80 V
Current-ContinuousDrain(Id)@25°C:
28A (Ta), 203A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
2.1mOhm @ 50A, 10V
Vgs(th)(Max)@Id:
4V @ 330µA
GateCharge(Qg)(Max)@Vgs:
85 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
5530 pF @ 40 V
FETFeature:
-
PowerDissipation(Max):
3.8W (Ta), 200W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

NTMFS6H800NT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTMFS6H800NT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTMFS6H800NT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTMFS6H800NT1G information

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NTMFS6H800NT1G Typical application Circuitry

NTMFS6H800NT1G

The NTMFS6H800NT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip designed for power management applications, with a focus on high current-handling capabilities. In many different electrical devices and systems where effective power control is crucial, this chip is frequently utilized.

Key Parameters and Features of NTMFS6H800NT1G:

- NTMFS6H800NT1G is an N-channel MOSFET transistor.

- It offers a low on-resistance (RDS(on)), minimizing power dissipation.

- The chip is appropriate for high-power applications since it can handle high drain current.

- It operates with a low gate threshold voltage (VGS(th)), allowing for easy control.

- Made to function over a broad voltage range.

Application Situation: Altering the Power Source

In this scenario, we will use the NTMFS6H800NT1G MOSFET in a circuit to control a switching power supply, which can be used to efficiently convert one voltage level to another, such as in a DC-DC converter for a portable device.

Circuit Connection:

- Connect the Drain (D) of the NTMFS6H800NT1G to the input voltage source.

The NTMFS6H800NT1G's Source (S) should be connected to ground (0V).

- Connect the Gate (G) of the NTMFS6H800NT1G to the control circuitry, typically through a gate driver IC for precise control.

- To ensure regulated switching, connect a gate resistor (R1) between the MOSFET's gate and gate driver output. This will limit the amount of current that enters the gate. The value of R1 depends on the gate driver's specifications.

- Connect a bootstrap capacitor (C1) between the Gate and Source to ensure proper gate drive voltage during switching. The capacitance value for C1 depends on the switching frequency and gate driver requirements.

- Connect an inductor (L1) between the Drain of the MOSFET and the load, forming the primary side of the DC-DC converter.

- Attach a diode (D1) in parallel to the inductor, with the cathode going to the load and the anode going to the MOSFET's drain.

- Attach an output capacitor (C2) in parallel with the load to filter the output voltage.

- Connect a feedback control loop from the output to the control circuitry to regulate the output voltage.

Considerations for Circuit Design:

1. Voltage Compatibility: Ensure that the voltage rating of the NTMFS6H800NT1G is compatible with the input voltage requirements.

2. Current Handling: Verify that the MOSFET has the capacity to manage the load's required current.

3. Gate Voltage: Use an appropriate gate driver to provide precise control of the MOSFET gate voltage.

4. Gate Resistor: Choose an appropriate value for R1 based on the gate driver's specifications to limit gate current.

5. Bootstrap Capacitor: Select a capacitance value for C1 that satisfies gate drive requirements, taking into account the switching frequency.

6. Inductor and Diode: Choose suitable components (L1 and D1) for the DC-DC converter design, considering efficiency and voltage regulation.

7. Output Capacitor: Ensure that C2 provides adequate filtering for stable output voltage.

8. Feedback Control: Implement a feedback control loop to regulate the output voltage accurately.

By carefully addressing these considerations and designing the circuit accordingly, you can create an efficient switching power supply using the NTMFS6H800NT1G MOSFET, suitable for various applications requiring voltage conversion and power management.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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