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Name: NTHL027N65S3HF
Brand: ON Semiconductor
SKU: NTHL027N65S3HF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTHL027N65S3HF

Part No.:: NTHL027N65S3HF

Manufacturer:: ON Semiconductor

Package:: TO-247-3

Datasheet:: NTHL027N65S3HF.pdf

Description:: MOSFET N-CH 650V 75A TO247-3

In Stock:: 342

Quantity:: Add To Cart

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NTHL027N65S3HF Specifications

Packaging:
Tube
Series:
FRFET®, SuperFET® III
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
650 V
Current-ContinuousDrain(Id)@25°C:
75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
27.4mOhm @ 35A, 10V
Vgs(th)(Max)@Id:
5V @ 3mA
GateCharge(Qg)(Max)@Vgs:
225 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
7630 pF @ 400 V
FETFeature:
-
PowerDissipation(Max):
595W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

NTHL027N65S3HF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTHL027N65S3HF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTHL027N65S3HF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTHL027N65S3HF information

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NTHL027N65S3HF Typical application Circuitry

NTHL027N65S3HF

NTHL027N65S3HF is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power conversion and switching applications. This device is often utilized in various sectors including automotive, industrial, power supply, and renewable energy systems due to its high efficiency, reliability, and ability to handle high currents and voltages.

Application Situation:

High Efficiency Conversion of Solar Power Inverter For solar power inverters, which transform DC power from solar panels into AC power for use at home or on the grid, the NTHL027N65S3HF is ideal. This MOSFET's high efficiency minimizes energy loss during the conversion process.

Parameter Characteristics:

Featuring a drain-source voltage (Vds) of 650V, a continuous drain current (Id) of 27A, and a low on-resistance (Rds(on)), the NTHL027N65S3HF offers superior performance in high-voltage power applications.

Circuit Connection Detail

Gate Drive Configuration: To fully turn on the NTHL027N65S3HF, a gate driver IC, such as the UCC27714, is used. The gate of the NTHL027N65S3HF is connected to the output of the gate driver IC, ensuring rapid and efficient switching.

Bootstrap Circuit for High-Side Switching: In a half-bridge configuration, the high-side NTHL027N65S3HF requires a bootstrap circuit comprising a diode and a capacitor to provide a higher gate voltage, ensuring the MOSFET turns on fully despite the high source voltage.

Dead Time Control: It's critical to implement dead time control between the high-side and low-side NTHL027N65S3HF switches to prevent simultaneous conduction, which could lead to short circuits. This is typically managed by the gate driver IC.

Thermal Management: The NTHL027N65S3HF can dissipate significant heat during operation. Proper thermal management, including heat sinks and thermal interface materials, is crucial to maintain performance and longevity.

Snubber Circuit: To protect the NTHL027N65S3HF from voltage spikes due to parasitic inductances, a snubber circuit composed of a resistor and capacitor in series may be connected across the MOSFET.

Design Considerations

When designing with the NTHL027N65S3HF, several key aspects must be considered:

- Gate Resistor Selection: The gate resistor value affects the switching speed and efficiency. A lower value decreases switching times but may increase electromagnetic interference (EMI), while a higher value reduces EMI but may increase switching losses.

- Voltage Rating: The selected NTHL027N65S3HF must have a voltage rating exceeding the maximum anticipated voltage in the application to prevent breakdown.

- Current Capacity: Ensure the NTHL027N65S3HF can handle the maximum current load, including transient spikes, without exceeding its maximum temperature rating.

- Parasitic Inductances: Minimizing parasitic inductances through careful PCB layout is essential to enhance switching performance and reduce EMI.

- Protection Features: Implementing protection mechanisms like over-current, over-voltage, and under-voltage lockout can safeguard the NTHL027N65S3HF and the overall system.

All things considered, the NTHL027N65S3HF is a strong MOSFET appropriate for high-efficiency power conversion uses, such solar inverters. Designing with this component requires careful consideration of its driving, thermal management, and protection to ensure optimal performance and reliability.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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