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Name: NTF3055L108T1G
Brand: ON Semiconductor
SKU: NTF3055L108T1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTF3055L108T1G

Part No.:: NTF3055L108T1G

Manufacturer:: ON Semiconductor

Package:: SOT-223 (TO-261)

Datasheet:: NTF3055L108T1G.pdf

Description:: MOSFET N-CH 60V 3A SOT223

In Stock:: 3867

Quantity:: Add To Cart

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NTF3055L108T1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
5V
RdsOn(Max)@IdVgs:
120mOhm @ 1.5A, 5V
Vgs(th)(Max)@Id:
2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
15 nC @ 5 V
Vgs(Max):
±15V
InputCapacitance(Ciss)(Max)@Vds:
440 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
1.3W (Ta)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

NTF3055L108T1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTF3055L108T1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTF3055L108T1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTF3055L108T1G information

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NTF3055L108T1G Typical application Circuitry

NTF3055L108T1G

The NTF3055L108T1G is an N-Channel Power MOSFET designed for applications requiring fast switching, high efficiency, and reliability.

Application Scenarios: This MOSFET is commonly used in power management for consumer electronics, automotive applications, and DC-DC converters.

Features of NTF3055L108T1G Parameter: Typically, this MOSFET would feature a high drain-source voltage (Vds), a considerable continuous drain current (Id), and a low on-state resistance (Rds(on)) for increased efficiency.

Circuit Connection:

1. Gate Control: A resistor is connected between the gate (Pin 1) and the driving voltage source to limit the gate current.

2. Drain Connection: The load's high side is connected to the drain (Pin 2).

3. Source and Grounding: The source (Pin 3) is grounded, establishing a return path for the current.

4. Freewheeling Diode: A diode may be placed in parallel with the load for back-EMF protection in inductive applications.

NTF3055L108T1G Design Considerations:

1. Thermal Management: Ensure adequate heat sinking to handle the power dissipation.

2. Gate Drive: Verify the gate-to-source voltage (Vgs) is within specified limits to fully turn on the MOSFET.

3. Overcurrent Protection: Integrate a current sensing resistor and protection circuit to prevent damage from excessive current.

4. ESD Protection: Gate-source ESD protection is crucial due to the sensitivity of the gate oxide.

In summary, when integrating the NTF3055L108T1G into a circuit, it is imperative to manage heat dissipation, provide proper gate drive voltage, safeguard against overcurrent scenarios, and protect the device from electrostatic discharge.

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6. What is the process for return or replacement of NTF3055L108T1G?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NTF3055L108T1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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