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Name: NTD3055-094T4G
Brand: ON Semiconductor
SKU: NTD3055-094T4G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTD3055-094T4G

Part No.:: NTD3055-094T4G

Manufacturer:: ON Semiconductor

Package:: DPAK

Datasheet:: NTD3055-094T4G.pdf

Description:: MOSFET N-CH 60V 12A DPAK

In Stock:: 3867

Quantity:: Add To Cart

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NTD3055-094T4G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
12A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
94mOhm @ 6A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
20 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
450 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
1.5W (Ta), 48W (Tj)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

NTD3055-094T4G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTD3055-094T4G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTD3055-094T4G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTD3055-094T4G information

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NTD3055-094T4G Typical application Circuitry

NTD3055-094T4G

NTD3055-094T4G is an N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) widely used in power management, switching, and amplification applications. Renowned for its efficient power conversion capabilities and low on-resistance, it serves as an ideal component for various electronic circuit designs.

Application Scenarios

NTD3055-094T4G is highly useful in diverse applications such as switch-mode power supplies, motor drives, DC-DC converters, and load switches. In these applications, the MOSFET acts as a high-speed switch controlling the flow of current, thus protecting the circuit from excessive current damage.

Parameter Features

- Threshold Voltage (Vth): The minimum gate voltage required to transition the MOSFET from the off state to the on state.

The highest voltage that a MOSFET can tolerate before failing is known as the drain-to-source breakdown voltage (Vds).

- On-Resistance (Rds(on)): The resistance from drain to source at a specific gate voltage, affecting the power loss of the device.

- The maximum continuous current that a MOSFET can conduct is known as the maximum drain current (Id).

Specific Application Scenario and Circuit Connection

In a simple DC Motor Drive circuit, NTD3055-094T4G can be used to control the turning on and off of a motor, and even speed regulation.

- Motor Control: Use NTD3055-094T4G as a switch to control the motor. One motor terminal should be connected to the MOSFET's drain, and the other terminal should be grounded.

- PWM Speed Control: By controlling the gate of NTD3055-094T4G with a PWM (Pulse Width Modulation) signal, precise control over motor speed can be achieved. One microcontroller that can produce the PWM signal is the Arduino D3 pin.

- Power Connection: Connect the positive terminal of the power supply to the node between the MOSFET's drain and the motor, providing power to both the motor and the MOSFET.

- Protection Component: Add a flyback diode between the source and drain of the MOSFET to protect NTD3055-094T4G from the reverse voltage spikes generated when the motor is turned off.

Design Considerations

When designing circuits with NTD3055-094T4G, the following considerations should be taken into account:

- Thermal Management: Ensure good heat dissipation for the MOSFET to avoid damage due to overheating.

- Drive Voltage: Ensure the gate drive voltage is within the threshold voltage range of NTD3055-094T4G for efficient switching.

- Protection Measures: Consider overcurrent, thermal, and Electrostatic Discharge (ESD) protection measures to extend the lifespan of the MOSFET.

- Circuit Layout: Optimize the circuit layout to reduce parasitic inductances and capacitances in the circuit, which could affect the performance of the MOSFET.

By carefully considering these design elements, efficient and reliable electronic circuit designs utilizing NTD3055-094T4G can be achieved.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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