NTD2955T4G

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ON Semiconductor NTD2955T4G

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Part No.:
NTD2955T4G
Manufacturer:
ON Semiconductor
Package:
DPAK
Datasheet:
NTD2955T4G.pdf
Description:
MOSFET P-CH 60V 12A DPAK
In Stock:
2512
Quantity:
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  • Purchase and inquiryPurchase and inquiry

    NTD2955T4G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTD2955T4G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTD2955T4G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    NTD2955T4G informationNTD2955T4G information

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    NTD2955T4G Typical application Circuitry

    NTD2955T4G

    The NTD2955T4G is a P-Channel Power MOSFET utilized predominantly for load switching and power management applications.

    Application Scenario: Load Switching in Power Distribution Systems.

    Parameter Characteristics: The NTD2955T4G typically has a -60V drain-to-source voltage (Vds), a continuous drain current (Id) of -12A, and a relatively low Rds(on) which minimizes power losses during operation.

    Circuit Connection:

    1. Source to Power Supply: Connect the Source pin (pin 2) directly to the power supply's positive rail.

    2. Drain to Load: The Drain pin (pin 1) should be connected to the load, which could be a motor or another module that requires power control.

    3. Gate to Control Signal: The Gate pin (pin 3) needs to be interfaced with a control signal, typically from a microcontroller or logic circuit, to switch the MOSFET on and off.

    4. Gate Protection: Integrate a resistor (e.g., 10kΩ) between Gate and Source and a Zener diode across the Gate and Source for voltage spike protection.

    NTD2955T4G Design Considerations:

    1. Voltage Ratings: Ensure that the NTD2955T4G operates within its voltage and current ratings to prevent failure.

    2. Thermal Management: Provide adequate heat sinking to dissipate heat generated during operation.

    3. Gate Drive Considerations: Ensure that the gate drive circuitry can supply sufficient voltage to fully turn the MOSFET on.

    4. PCB Design: Proper layout to minimize inductance and noise susceptibility.

    In applications such as power distribution systems, using the NTD2955T4G involves careful attention to voltage ratings, thermal management, and robust gate drive circuitry. Effective PCB layout is crucial to mitigate potential issues arising from inductance and noise.

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    3. Are the NTD2955T4G price and inventory displayed accurate?

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    6. What is the process for return or replacement of NTD2955T4G?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NTD2955T4G we delivered, we will accept the replacement or return of the NTD2955T4G only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of NTD2955T4G.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as NTD2955T4G pin diagram, NTD2955T4G datasheet?

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