What is the Additional Feature ?

Name: NTBG020N120SC1
Brand: ON Semiconductor
SKU: NTBG020N120SC1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTBG020N120SC1

Part No.:: NTBG020N120SC1

Manufacturer:: ON Semiconductor

Package:: D2PAK-7

Datasheet:: NTBG020N120SC1.pdf

Description:: SICFET N-CH 1200V 8.6A/98A D2PAK

In Stock:: 3907

Quantity:: Add To Cart

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NTBG020N120SC1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss):
1200 V
Current-ContinuousDrain(Id)@25°C:
8.6A (Ta), 98A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
20V
RdsOn(Max)@IdVgs:
28mOhm @ 60A, 20V
Vgs(th)(Max)@Id:
4.3V @ 20mA
GateCharge(Qg)(Max)@Vgs:
220 nC @ 20 V
Vgs(Max):
+25V, -15V
InputCapacitance(Ciss)(Max)@Vds:
2943 pF @ 800 V
FETFeature:
-
PowerDissipation(Max):
3.7W (Ta), 468W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

NTBG020N120SC1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTBG020N120SC1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTBG020N120SC1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTBG020N120SC1 information

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NTBG020N120SC1 Typical application Circuitry

NTBG020N120SC1

The NTBG020N120SC1 is a state-of-the-art silicon carbide (SiC) N-channel MOSFET, known for its exceptional efficiency and performance in high-voltage, high-temperature, and high-speed applications.

Application Scenario: Electric Vehicle (EV) On-board Charger

A prime application for the NTBG020N120SC1 is in the power stage of an electric vehicle's on-board charger, where it can efficiently convert AC power from the grid to DC power to charge the vehicle's battery. This process demands high efficiency, compact size, and exceptional reliability.

Detailed Circuit Connection

1.AC to DC Rectification: In the charger circuit, the NTBG020N120SC1 is utilized in a bridge configuration to rectify AC input to DC. Each MOSFET's drain is connected to an AC input phase, and their sources are interconnected, forming a half-bridge topology. This arrangement leverages the low on-resistance and high-speed switching capabilities of the NTBG020N120SC1.

2.Gate Drive Circuitry: The gate of each NTBG020N120SC1 requires a dedicated gate driver circuit, capable of providing the gate voltage swing necessary for switching at high frequencies. This circuit must also include desaturation detection to protect the NTBG020N120SC1 from overcurrent conditions by quickly turning it off when abnormal operation is detected.

3.DC Link Capacitors: After rectification, DC link capacitors are placed across the output of the rectifier stage. These capacitors buffer the DC power and smooth out any ripples. The low on-resistance and high switching speed of the NTBG020N120SC1 minimize energy loss, allowing for smaller and less expensive capacitors.

4.Thermal Management: Given the power levels involved in EV charging, the NTBG020N120SC1 can generate significant heat. Efficient thermal management is crucial. This includes using heat sinks, thermal interface materials, and careful PCB layout to enhance heat dissipation from the NTBG020N120SC1 to the environment.

5.Isolation Measures: For safety, especially in high-voltage applications like EV charging, ensure that the gate driver circuitry is electrically isolated from the high-voltage NTBG020N120SC1 switching nodes. This can be achieved through optocouplers or transformer-based isolation techniques in the gate drive circuits.

Design Considerations

When integrating the NTBG020N120SC1 into a circuit, several important factors must be considered:

- Switching Frequency: The high switching speed of the NTBG020N120SC1 allows for operation at higher frequencies, which can reduce the size of passive components. However, higher switching frequencies can increase switching losses, so an optimal frequency should be chosen based on the specific application requirements.

- Gate Drive Voltage: Properly configure the gate drive voltage to fully enhance the NTBG020N120SC1 without exceeding its maximum gate-source voltage (V_GS) rating, ensuring efficient operation and long-term reliability.

- Parasitic Inductances: Minimize parasitic inductances in the layout to reduce voltage overshoot and ringing during switching, which can stress the NTBG020N120SC1 and reduce efficiency. Careful PCB layout and component placement are essential.

- Protection Circuits: Implement protection circuits to safeguard the NTBG020N120SC1 against overcurrent, overvoltage, and overheating. This enhances the reliability and longevity of the MOSFET and the overall system.

In conclusion, the NTBG020N120SC1 SiC MOSFET is a powerful component for applications requiring high efficiency, compact size, and robust performance. By focusing on detailed circuit connections and considering essential design factors, engineers can leverage the NTBG020N120SC1 to develop advanced power conversion systems, such as those found in electric vehicle charging infrastructure.

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